JAJSEO7I October   2008  – December 2017 TPS23754 , TPS23754-1 , TPS23756

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      TPS23754を使用する高効率コンバータ
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Electrical Characteristics: PoE and Control
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  APD
      2. 8.3.2  BLNK
      3. 8.3.3  CLS
      4. 8.3.4  Current Sense (CS)
      5. 8.3.5  Control (CTL)
      6. 8.3.6  Detection and Enable (DEN)
      7. 8.3.7  DT
      8. 8.3.8  Frequency and Synchronization (FRS)
      9. 8.3.9  GATE
      10. 8.3.10 GAT2
      11. 8.3.11 PPD
      12. 8.3.12 RTN, ARTN, COM
      13. 8.3.13 T2P
      14. 8.3.14 VB
      15. 8.3.15 VC
      16. 8.3.16 VDD
      17. 8.3.17 VDD1
      18. 8.3.18 VSS
      19. 8.3.19 PowerPAD
    4. 8.4 Device Functional Modes
      1. 8.4.1 PoE Overview
        1. 8.4.1.1  Threshold Voltages
        2. 8.4.1.2  PoE Start-Up Sequence
        3. 8.4.1.3  Detection
        4. 8.4.1.4  Hardware Classification
        5. 8.4.1.5  Inrush and Start-Up
        6. 8.4.1.6  Maintain Power Signature
        7. 8.4.1.7  Start-Up and Converter Operation
        8. 8.4.1.8  PD Hotswap Operation
        9. 8.4.1.9  Converter Controller Features
        10. 8.4.1.10 Bootstrap Topology
        11. 8.4.1.11 Current Slope Compensation and Current Limit
        12. 8.4.1.12 Blanking – RBLNK
        13. 8.4.1.13 Dead Time
        14. 8.4.1.14 FRS and Synchronization
        15. 8.4.1.15 T2P, Start-Up, and Power Management
        16. 8.4.1.16 Thermal Shutdown
        17. 8.4.1.17 Adapter ORing
        18. 8.4.1.18 PPD ORing Features
        19. 8.4.1.19 Using DEN to Disable PoE
        20. 8.4.1.20 ORing Challenges
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Input Bridges and Schottky Diodes
        2. 9.2.2.2  Protection, D1
        3. 9.2.2.3  Capacitor, C1
        4. 9.2.2.4  Detection Resistor, RDEN
        5. 9.2.2.5  Classification Resistor, RCLS
        6. 9.2.2.6  Dead Time Resistor, RDT
        7. 9.2.2.7  Switching Transformer Considerations and RVC
        8. 9.2.2.8  Special Switching MOSFET Considerations
        9. 9.2.2.9  Thermal Considerations and OTSD
        10. 9.2.2.10 APD Pin Divider Network, RAPD1, RAPD2
        11. 9.2.2.11 PPD Pin Divider Network, RPPD1, RPPD2
        12. 9.2.2.12 Setting Frequency (RFRS) and Synchronization
        13. 9.2.2.13 Current Slope Compensation
        14. 9.2.2.14 Blanking Period, RBLNK
        15. 9.2.2.15 Estimating Bias Supply Requirements and CVC
        16. 9.2.2.16 T2P Pin Interface
        17. 9.2.2.17 Advanced ORing Techniques
        18. 9.2.2.18 Soft Start
        19. 9.2.2.19 Frequency Dithering for Conducted Emissions Control
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 ESD
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
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サーマルパッド・メカニカル・データ
発注情報

7.6 Electrical Characteristics: PoE and Control

[VDD = VDD1] or [VDD1 = RTN], VC = RTN, COM = RTN = ARTN, all voltages referred to VSS unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN) (VDD = VDD1 = RTN = VSUPPLY positive)
Detection current Measure ISUPPLY
VDD = 1.6 V 62 64.3 66.5 μA
VDD = 10 V 399 406 414
Detection bias current VDD = 10 V, float DEN, measure ISUPPLY,
Note: Not during Mark state 		5.6 10 μA
VPD_DIS Hotswap disable threshold 3 4 5 V
DEN leakage current VDEN = VDD = 57 V, float VDD1 and RTN, measure IDEN 0.1 5 μA
CLASSIFICATION (CLS) (VDD = VDD1 = RTN = VSUPPLY positive)
ICLS Classification current,
applies to both cycles		 13 V ≤ VDD ≤ 21 V, Measure ISUPPLY mA
RCLS = 1270 Ω 1.8 2.1 2.4
RCLS = 243 Ω 9.9 10.4 10.9
RCLS = 137 Ω 17.6 18.5 19.4
RCLS = 90.9 Ω 26.5 27.7 29.3
RCLS = 63.4 Ω 38 39.7 42
Classification mark resistance 5.6 V ≤ VDD ≤ 9.4 V 7.5 9.7 12 kΩ
VCL_ON Classification regulator lower threshold Regulator turns on, VDD rising 11.2 11.9 12.6 V
VCL_H Hysteresis(1) 1.55 1.65 1.75
VCU_OFF Classification regulator upper threshold Regulator turns off, VDD rising 21 22 23 V
VCU_H Hysteresis(1) 0.5 0.75 1
VMSR Mark state reset VDD falling 3 4 5 V
Leakage current VDD = 57 V, VCLS = 0 V, DEN = VSS, measure ICLS 1 μA
PASS DEVICE (RTN) (VDD1 = RTN)
On resistance 0.25 0.43 0.75 Ω
Current limit VRTN = 1.5 V, VDD = 48 V, pulsed measurement 850 970 1100 mA
Inrush limit VRTN = 2 V, VDD: 0 V → 48 V, pulsed measurement 100 140 180 mA
Foldback voltage threshold VDD rising 11 12.3 13.6 V
UVLO
VUVLO_R UVLO threshold VDD rising 33.9 35 36.1 V
VUVLO_H Hysteresis(1) 4.4 4.55 4.76
T2P
ON characteristic Perform classification algorithm, VT2P-RTN = 1 V,
CTL = ARTN		 2 mA
Leakage current VT2P = 18 V, CTL = VB 10 μA
THERMAL SHUTDOWN
Turnoff temperature TJ rising 135 145 155 °C
Hysteresis(2) 20 °C
(1) The hysteresis tolerance tracks the rising threshold for a given device.
(2) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty.