SLVSB99C March   2012  – July 2015 TPS2378

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  APD Auxiliary Power Detect
      2. 7.3.2  CDB Converter Disable Bar Pin Interface
      3. 7.3.3  CLS Classification
      4. 7.3.4  DEN Detection and Enable
      5. 7.3.5  Internal Pass MOSFET
      6. 7.3.6  T2P Type-2 PSE Indicator
      7. 7.3.7  VDD Supply Voltage
      8. 7.3.8  VSS
      9. 7.3.9  PowerPAD
      10. 7.3.10 Forced, Four-Pair, High Power PoE
    4. 7.4 Device Functional Modes
      1. 7.4.1  PoE Overview
      2. 7.4.2  Threshold Voltages
      3. 7.4.3  PoE Start-up Sequence
      4. 7.4.4  Detection
      5. 7.4.5  Hardware Classification
      6. 7.4.6  Inrush and Start-up
      7. 7.4.7  Maintain Power Signature
      8. 7.4.8  Start-up and Converter Operation
      9. 7.4.9  PD Hotswap Operation
      10. 7.4.10 Start-up and Power Management, CDB and T2P
      11. 7.4.11 Adapter ORing
      12. 7.4.12 Using DEN to Disable PoE
      13. 7.4.13 ORing Challenges
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Requirements
        1. 8.2.2.1 Input Bridges and Schottky Diodes
        2. 8.2.2.2 Protection, D1
        3. 8.2.2.3 Capacitor, C1
        4. 8.2.2.4 Detection Resistor, RDEN
        5. 8.2.2.5 Classification Resistor, RCLS
        6. 8.2.2.6 APD Pin Divider Network RAPD1, RAPD2
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 EMI Containment
    4. 10.4 Thermal Considerations and OTSD
    5. 10.5 ESD
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over recommended TJ range; voltages with respect to VVSS (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage VDD, DEN –0.3 100 V
RTN(2) –0.6 100
CLS(3) –0.3 6.5
APD to RTN –0.3 19
[CDB, T2P] to RTN –0.3 100
Sinking current RTN(4) Internally limited mA
CDB, T2P 5
DEN 1
Sourcing current CLS 65 mA
TJMAX Maximum junction temperature Internally limited °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With I(RTN) = 0
(3) Do not apply voltages to these pins
(4) SOA limited to RTN = 80 V at 1.2 A.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 500
IEC 61000-4-2 contact discharge(3) 8000
IEC 61000-4-2 air-gap discharge(3) 15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Discharges applied to circuit of Figure 24 between RJ-45, adapter, and output voltage rails

6.3 Recommended Operating Conditions

over operating free-air temperature range and voltages with respect to VSS (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range RTN, VDD 0 57 V
APD to RTN 0 18
CDB, T2P to RTN 0 57
Sinking current RTN 0.85 A
CDB, T2P 2 mA
Resistance CLS(1) 60 Ω
Junction temperature –40 125 °C
(1) Voltage should not be externally applied to this pin.

6.4 Thermal Information

THERMAL METRIC(1) TPS2378 UNIT
SO-8 PowerPad™
8 PINS
RθJA Junction-to-ambient thermal resistance 45.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.9 °C/W
RθJB Junction-to-board thermal resistance 28.8 °C/W
ψJT Junction-to-top characterization parameter 8.9 °C/W
ψJB Junction-to-board characterization parameter 28.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

40 V ≤ VVDD ≤ 57 V, RDEN = 24.9 kΩ, VCDB, VCLS, and VT2P open; VAPD = VRTN; –40°C ≤ TJ ≤ 125°C. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to VVSS unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN)
Bias current DEN open, VVDD = 10.1 V, Measure ISUPPLY(VDD, RTN, DEN), Not in mark 3 4.8 12 µA
Detection current Measure ISUPPLY(VDD, RTN, DEN), VDD = 1.4 V 53.8 56.5 58.3 µA
Measure ISUPPLY(VDD, RTN, DEN), VDD = 10.1 V, Not in mark 395 410 417
VPD_DIS Disable threshold DEN falling 3 3.7 5 V
Hysteresis 50 113 200 mV
AUXILIARY POWER DETECTION (APD)
VAPDEN Voltage threshold VAPD rising, measure to VRTN 1.4 1.5 1.6 V
VAPDH Hysteresis, measure to VRTN 0.27 0.3 0.33
Sinking current V(APD–RTN) = 5 V, measure IAPD 1 1.73 3 µA
CLASSIFICATION (CLS)
ICLS Classification current 13 V ≤ VVDD ≤ 21 V, Measure IVDD + IDEN + IRTN
RCLS = 1270 Ω 1.8 2.17 2.6 mA
RCLS = 243 Ω 9.9 10.6 11.2
RCLS = 137 Ω 17.6 18.6 19.4
RCLS = 90.9 Ω 26.5 27.9 29.3
RCLS = 63.4 Ω 38 39.9 42
VCL_ON Class lower threshold VVDD rising, ICLS ↑ 11.9 12.5 13 V
VCL_H Hysteresis 1.4 1.6 1.7
VCU_ON Class upper threshold VVDD rising, ICLS↓ 21 22 23 V
VCU_H Hysteresis 0.5 0.78 0.9
VMSR Mark reset threshold VVDD falling 3 3.9 5 V
Mark state resistance 2-point measurement at 5 V and 10.1 V 6 10 12 kΩ
Leakage current VVDD = 57 V, VCLS = 0 V, measure ICLS 1 µA
PASS DEVICE (RTN)
rDS(on) On resistance 0.2 0.42 0.75 Ω
Input bias current VVDD = VRTN = 30 V, measure IRTN 30 µA
Current limit VRTN =1.5 V 0.85 1 1.2 A
Inrush current limit VRTN = 2 V, VVDD: 20 V → 48 V 100 140 180 mA
Inrush termination Percentage of inrush current 80% 90% 99%
Foldback threshold VRTN rising 11 12.3 13.6 V
Foldback deglitch time VRTN rising to when current limit changes to inrush current limit 500 800 1500 µs
CONVERTER DISABLE (CDB)
Output low voltage Measure VCDB – VRTN, ICDB = 2 mA,
VRTN = 2 V, VDD: 20 V → 48 V		 0.27 0.5 V
Leakage current VCDB = 57 V, VRTN = 0 V 10 μA
TYPE 2 PSE INDICATION (T2P)
VT2P Output low voltage IT2P = 2 mA, after 2-event classification and inrush is complete, VRTN = 0 V 0.26 0.6 V
Leakage current VT2P = 57 V, VRTN = 0 V 10 µA
UVLO
VUVLO_R UVLO rising threshold VVDD rising 36.3 38.1 40 V
UVLO falling threshold VVDD falling 30.5 32 33.6
VUVLO_H UVLO hysteresis 6.1 V
THERMAL SHUTDOWN
Shutdown TJ↑ 135 145 °C
Hysteresis (1) 20
BIAS CURRENT
Operating current 40 V ≤ VVDD ≤ 57 V 285 500 µA
(1) Parameters provided for reference only, and do not constitute part of TI published specifications for purposes of TI product warranty.

6.6 Typical Characteristics

TPS2378 Detection Bias Current vs PoE Voltage.png
Figure 1. Detection Bias Current vs PoE Voltage
TPS2378 APD Threshold Voltage vs Temperature.png
Figure 3. APD Threshold Voltage vs Temperature
TPS2378 Classificatin Upper Threshold vs Temperature.png
Figure 5. Classification Upper Threshold vs Temperature
TPS2378 Mark Reset Resistance vs Temperature.png
Figure 7. Mark Resistance vs PoE Voltage
TPS2378 Pass FET Resistance vs Temperature.png
Figure 9. Pass FET Resistance vs Temperature
TPS2378 PoE Inrush Current Limit vs Temperature.png
Figure 11. PoE Inrush Current Limit vs Temperature
TPS2378 UVLO Rising Threshold vs Temperature.png
Figure 13. UVLO Rising Threshold vs Temperature
TPS2378 Detection Resistance vs PoE Voltage.png
Figure 2. Detection Resistance vs PoE Voltage
TPS2378 Classification Lower Threshold vs Temperature.png
Figure 4. Classification Lower Threshold vs Temperature
TPS2378 Mark Reset Threshold vs Temperature.png
Figure 6. Mark Reset Threshold vs Temperature
TPS2378 IVDD Bias Current vs Voltage.png
Figure 8. IVDD Bias Current vs Voltage
TPS2378 PoE Current Limit vs Temperature.png
Figure 10. PoE Current Limit vs Temperature
TPS2378 Inrush Termination Threshold vs Temperature.png
Figure 12. Inrush Termination Threshold vs Temperature
TPS2378 UVLO Falling Threshold vs Temperature.png
Figure 14. UVLO Falling Threshold vs Temperature