JAJS232E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison
  7. 7 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics: TPS2410, 11
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Device Pins
        1. 9.3.1.1  A, C:
        2. 9.3.1.2  BYP:
        3. 9.3.1.3  FLTR:
        4. 9.3.1.4  FLTB:
        5. 9.3.1.5  GATE:
        6. 9.3.1.6  GND:
        7. 9.3.1.7  RSET:
        8. 9.3.1.8  RSVD:
        9. 9.3.1.9  STAT
        10. 9.3.1.10 UV, OV, PG:
        11. 9.3.1.11 VDD:
      2. 9.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 9.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 9.3.4 UV, OV, and PG
      5. 9.3.5 Input ORing and Stat
    4. 9.4 Device Functional Modes
      1. 9.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  10. 10Application and Implementation
    1. 10.1 Typical Connections
      1. 10.1.1 N+1 Power Supply
      2. 10.1.2 Input ORing
    2. 10.2 Typical Application Examples
      1. 10.2.1 VDD, BYP, and Powering Options
      2. 10.2.2 Bidirectional Blocking and Protection of C
      3. 10.2.3 ORing Examples
      4. 10.2.4 Design Requirements
        1. 10.2.4.1 MOSFET Selection and R(RSET)
        2. 10.2.4.2 TPS2410 Regulation-loop Stability
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Recommended Operating Range
    2. 11.2 System Design and Behavior with Transients
  12. 12Layout
    1. 12.1 Layout Considerations
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
    2. 13.2 関連リンク
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

8.5 Electrical Characteristics: TPS2410, 11(1)(2)(3)(4)(5)(6)(7)

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(A), V(C), VDD
VDD UVLO VDD rising 2.25 2.5 V
Hysteresis 0.25
A current | I(A) |, Gate in active range 0.66 1 mA
| I(A) |, Gate saturated high 0.1
C current | I(C) |, VAC  ≤ 0.1 V 10 μA
VDD current Worst case, gate in active range 4.25 6 mA
Gate saturated high 1.2
UV / OV / PG
UV threshold voltage V(UV) rising, V(OV) = 0 V, PG goes high 0.583 0.6 0.615 V
OV threshold voltage V(OV) rising, V(UV) = 1 V, PG goes low 0.583 0.6 0.615 V
Response time 50-mV overdrive 0.3 0.6 μs
Hysteresis V(UV) and V(OV) 7 mV
PG sink current V(UV) = 0 V, V(OV) = 0 V, V(PG) = 0.4 V 4 mA
UV / OV leakage current (source or sink) 1 μA
PG leakage current (source or sink) V(UV) = 1 V, V(OV) = 0 V, 0 ≤ V(PG)  ≤ 5 V 1 μA
FLTB
Sink current V(FLTB) = 0.4 V, V(GATE-)A = 0 V, V(A-C) = 0.1 V 4 mA
V(GATE-A) fault threshold V(A) = V(C) + 20 mV, V(GATE-A) falling until FLTB switches low 0.5 0.78 1 V
V(A-C) fault threshold V(A-C) = 0.1 V, increase V(A-C) until FLTB switches low 0.325 0.425 0.525 V
Deglitch on assertion 3.4 ms
Leakage current (source or sink) 1 μA
STAT
Sink current V(STAT) = 0.4 V, V(A) = V(C) + 0.1 V 4 mA
Input threshold VDD  ≥ 3 V VDD/2 V
Response time From fast turn-off initiation 50 ns
Source pull-up resistance 30 46 60 kΩ
FLTR
Filter resistance R(FLTR-C) 520 Ω
TURN ON
TPS2410 forward turn-on and regulation voltage 7 10 13 mV
TPS2410 forward turn-on / turn-off difference R(RSET) = open 7 mV
TPS2411 forward turn-on voltage 7 10 13 mV
TURN OFF
Fast turn-off threshold voltage GATE sinks > 10 mA at V(GATE-A) = 2 V mV
V(A-C) falling, R(RSET) = open 1 3 5
V(A-C) falling, R(RSET) = 28.7 kΩ -17 -13.25 -10
V(A-C) falling, R(RSET) = 3.24 kΩ -170 -142 -114
Additional threshold shift with STAT held low -157 mV
Turn-off delay V(A) = 12 V, V(A-C): 20 mV → -20 mV,
V(GATE-A) begins to decrease		 70 ns
Turn-off time V(A) = 12 V, C(GATE-GND) = 0.01 μF,
V(A-C) : 20 mV → -20 mV,
measure the period to V(GATE) = V(A) 		130 ns
GATE
Gate positive drive voltage, V(GATE-A) VDD = 3 V, V(A-C) = 20 mV 6 7 8 V
5 V ≤ VDD ≤ 18 V, V(A-C)= 20 mV 9 10.2 12.5
Gate source current V(A-C) = 50 mV, V(GATE-A) = 4 V 250 290 350 μA
Soft turn-off sink current (TPS2410) V(A-C) = 4 mV, V(GATE-A) = 2 V 2 5 mA
Fast turn-off pulsed current, I(GATE) V(A-C) = -0.1 V 1.75 2.35 A
V(GATE) = 8 V
V(GATE) = 5 V 1.25 1.75
Period 7.5 12.5 μs
Sustain turn-off current, I(GATE) V(A-C) = –0.1 V, V(C) = VDD, 3 ≤ VDD  ≤ 18 V,
2 V ≤ V(GATE)  ≤ 18 V		 15 19.5 mA
MISCELLANEOUS
Thermal shutdown temperature Temperature rising, TJ 135 °C
Thermal hysteresis 10 °C
(1) [3 V ≤ V(A) ≤ 18 V, V(C) = VDD] or [0.8 V ≤ V(A)  ≤ 3 V, 3 V ≤ VDD  ≤ 18 V]
(2) C(FLTR) = open, C(BYP) = 2200 pF, R(RSET) = open, STAT = open, FLT = open
(3) UV = 1 V, OV = GND
(4) –40°C ≤ TJ  ≤ 125°C
(5) Positive currents are into pins
(6) Typical values are at 25°C
(7) All voltages are with respect to GND.