JAJSGL9C October   2013  – December 2018 TPS24750 , TPS24751

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーション回路図 (12V、10A)
      2.      過渡出力短絡応答
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Descriptions
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  DRAIN
      2. 9.3.2  EN
      3. 9.3.3  FLTb
      4. 9.3.4  GATE
      5. 9.3.5  GND
      6. 9.3.6  IMON
      7. 9.3.7  OUT
      8. 9.3.8  OV
      9. 9.3.9  PGb
      10. 9.3.10 PROG
      11. 9.3.11 SENSE
      12. 9.3.12 TIMER
      13. 9.3.13 VCC
    4. 9.4 Device Functional Modes
      1. 9.4.1 Board Plug-In
      2. 9.4.2 Inrush Operation
      3. 9.4.3 Action of the Constant-Power Engine
      4. 9.4.4 Circuit Breaker and Fast Trip
      5. 9.4.5 Automatic Restart
      6. 9.4.6 Start-Up with Short on Output
      7. 9.4.7 PGb, FLTb, and Timer Operations
        1. 9.4.7.1 Overtemperature Shutdown
        2. 9.4.7.2 Start-Up of Hot-Swap Circuit by VCC or EN
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Power-Limited Start-Up
          1. 10.2.2.1.1 STEP 1. Choose RSENSE, RSET, and RIMON
          2. 10.2.2.1.2 STEP 2. Choose Power-Limit Value, PLIM, and RPROG
          3. 10.2.2.1.3 STEP 3. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT
          4. 10.2.2.1.4 STEP 4. Calculate the Retry-Mode Duty Ratio
          5. 10.2.2.1.5 STEP 5. Select R1, R2, and R3 for UV and OV
          6. 10.2.2.1.6 STEP 6. Choose R4, R5, and C1
        2. 10.2.2.2 Alternative Design Example: Gate Capacitor (dv/dt) Control in Inrush Mode
        3. 10.2.2.3 Additional Design Considerations
          1. 10.2.2.3.1 Use of PGb
          2. 10.2.2.3.2 Output Clamp Diode
          3. 10.2.2.3.3 Gate Clamp Diode
          4. 10.2.2.3.4 Bypass Capacitors
          5. 10.2.2.3.5 Output Short-Circuit Measurements
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
    1. 11.1 Transient Thermal Impedance
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
      1. 13.1.1 関連資料
    2. 13.2 関連リンク
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Export Control Notice
    8. 13.8 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.3.7 OUT

This pin is connected to the source of the internal MOSFET inside the chip. It allows the device to measure the drain-to-source voltage across the internal MOSFET. The power good indicator (PGb) relies upon this information, as does the power limiting engine. The OUT pin must be bypassed to GND with a low-impedance ceramic capacitor in the range of 10 nF to 1 μF. Connect all the OUT pins to output capacitors and load. In the presence of cable inductance, the OUT pin must be protected from negative voltage transients by using a clamping/Schottky diode.