SLVSCZ3 March   2015 TPS24770 , TPS24771 , TPS24772

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable and Over-voltage Protection
      2. 9.3.2 Current Limit and Power Limit during Start-up
      3. 9.3.3 Two Level Protection During Regular Operation
      4. 9.3.4 Dual Timer (TFLT and TINR)
      5. 9.3.5 3 Options for Response to a Fast Trip
      6. 9.3.6 Using Soft Start - IHGATE and TINR Considerations
      7. 9.3.7 Analog Current Monitor
      8. 9.3.8 Power Good Flag
      9. 9.3.9 Fault Reporting
    4. 9.4 Device Functional Modes
      1. 9.4.1 Hot Swap Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 12 V, 100 A, 5,500 µF Analog Hot Swap Design
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1  Select RSNS and VSNS,CL Setting
        2. 10.2.3.2  Selecting the Fast Trip Threshold and Filtering
        3. 10.2.3.3  Selecting the Hot Swap FET(s)
        4. 10.2.3.4  Select Power Limit
        5. 10.2.3.5  Set Fault Timer
        6. 10.2.3.6  Check MOSFET SOA
        7. 10.2.3.7  Choose Under Voltage and Over Voltage Settings
        8. 10.2.3.8  Selecting C1 and COUT
        9. 10.2.3.9  Adding CENHS
        10. 10.2.3.10 Selecting D1 and D2
        11. 10.2.3.11 Checking Stability
        12. 10.2.3.12 Compute Tolerances
      4. 10.2.4 Application Curves
      5. 10.2.5 240 VA Application Using CSD16415Q5B
        1. 10.2.5.1 Design Requirements
        2. 10.2.5.2 Theory of Operations
        3. 10.2.5.3 Design Procedure
          1. 10.2.5.3.1 Select VSNS,CL, RSNS, and RSET Setting
            1. 10.2.5.3.1.1 Select RPOW and RIMON
            2. 10.2.5.3.1.2 Selecting the Hot Swap FET(s)
            3. 10.2.5.3.1.3 Keeping MOSFET within SOA During Normal Start-up
            4. 10.2.5.3.1.4 Choose Fault Timer
            5. 10.2.5.3.1.5 Choose Under Voltage and Over Voltage Settings
            6. 10.2.5.3.1.6 Selecting CIN and COUT
            7. 10.2.5.3.1.7 Selecting D1 and D2
            8. 10.2.5.3.1.8 Adding CENHS
            9. 10.2.5.3.1.9 Stability Considerations
        4. 10.2.5.4 Application Curves
      6. 10.2.6 240 VA Application Using CSD17573Q5B
        1. 10.2.6.1 Design Requirements
          1. 10.2.6.1.1 Choosing C1, COUT, CFLT, CENHS, D1, D2, RSET, RPOW, RIMON, RSNS, CDVDT, RPLIM, and UV/OV Thresholds
          2. 10.2.6.1.2 Selecting the Hot Swap FET(s)
          3. 10.2.6.1.3 Keeping the MOSFET within SOA
        2. 10.2.6.2 Q2 Selection
        3. 10.2.6.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

13 Device and Documentation Support

13.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 6. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
TPS24770 Click here Click here Click here Click here Click here
TPS24771 Click here Click here Click here Click here Click here
TPS24772 Click here Click here Click here Click here Click here

13.2 Trademarks

All other trademarks are the property of their respective owners.

13.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.