JAJS440B November   2009  – December 2016 TPS2556 , TPS2557

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Overcurrent Conditions
      2. 9.3.2 FAULT Response
      3. 9.3.3 Undervoltage Lockout (UVLO)
      4. 9.3.4 Enable (EN OR EN)
      5. 9.3.5 Thermal Sense
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Current-Limiting Power-Distribution Switch
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Input and Output Capacitance
          2. 10.2.1.2.2 Programming the Current-Limit Threshold
            1. 10.2.1.2.2.1 Designing Above a Minimum Current Limit
            2. 10.2.1.2.2.2 Designing Below a Maximum Current Limit
            3. 10.2.1.2.2.3 Accounting for Resistor Tolerance
          3. 10.2.1.2.3 Auto-Retry Functionality
          4. 10.2.1.2.4 Two-Level Current-Limit Circuit
        3. 10.2.1.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 関連リンク
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 用語集
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Voltage IN, OUT, EN or EN, ILIM, and FAULT pins –0.3 7 V
Voltage from IN to OUT –7 7 V
Continuous output current Internally limited
Continuous FAULT sink current 25 mA
ILIM source current Internally limited
Continuous total power dissipation See Thermal Information
Maximum junction temperature –40 OTSD2 °C
Storage temperature, Tstg -65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Voltages are referenced to GND unless otherwise noted.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
IEC 61000-4-2 contact discharge(3) ±8000
IEC 61000-4-2 air discharge(3) ±15000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Surges per EN61000-4-2, 1999 applied between USB and output ground of the TPS2556EVM (HPA423) evaluation module (see Using the TPS2556EVM-423 and TPS2557EVM-423). These were the test levels, not the failure threshold.

Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage, IN 2.5 6.5 V
VEN Enable voltage TPS2556 0 6.5 V
VEN TPS2557 0 6.5
VIH High-level input voltage on Enable pin 1.1 V
VIL Low-level input voltage on Enable pin 0.66
IOUT Continuous output current (OUT pin) 0 5 A
Continuous FAULT sink current 0 10 mA
RILIM Recommended resistor limit 20 187
TJ Operating virtual junction temperature –40 125 °C

Thermal Information

THERMAL METRIC(1) TPS255x UNIT
DRB (VSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 41.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.5 °C/W
RθJB Junction-to-board thermal resistance 16.4 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 16.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.6 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Electrical Characteristics

over recommended operating conditions, VEN = 0 V or VEN = VIN (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
rDS(ON) Static drain-source on-state resistance TJ = 25°C 22 25
–40°C ≤TJ ≤ 125°C 35
Enable pin turn on and off threshold 0.66 1.1 V
Enable input hysteresis(2) 55 mV
IEN Input current VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V –0.5 0.5 µA
IOS Current-limit threshold (Maximum DC output current IOUT delivered to load) and short-circuit current, OUT connected to GND RILIM = 24.9 kΩ 4130 4450 4695 mA
RILIM = 61.9 kΩ 1590 1785 1960
RILIM = 100 kΩ 935 1100 1260
IIN_OFF Supply current, low-level output VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V 0.1 2 µA
IIN_ON Supply current, high-level output VIN = 6.5 V, No load on OUT RILIM = 24.9 kΩ 95 120 µA
RILIM = 100 kΩ 85 110 µA
IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V, TJ = 25 °C 0.01 1 µA
UVLO Low-level input voltage (IN pin) VIN rising 2.35 2.45 V
UVLO hysteresis (IN pin)(2) 35 mV
FAULT FLAG
VOL Output low voltage (FAULT pin) IFAULT = 1 mA 180 mV
Off-state leakage VFAULT = 6.5 V 1 µA
FAULT deglitch FAULT assertion or deassertion due to overcurrent condition 6 9 13 ms
THERMAL SHUTDOWN
OTSD2 Thermal shutdown threshold 155 °C
OTSD Thermal shutdown threshold in current-limit 135 °C
Hysteresis(2) 20 °C
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be considered separately.
These parameters are provided for reference only, and do no constitute part of TI's published specifications for purposes of TI's product warranty.

Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tR Rise time, output CL = 1 µF, RL= 100 Ω, (see Figure 15) VIN = 6.5 V 2 3 4 ms
VIN = 2.5 V 1 2 3
tF Fall time, output CL = 1 µF, RL= 100 Ω, (see Figure 15) VIN = 6.5 V 0.6 0.8 1 ms
VIN = 2.5 V 0.4 0.6 0.8
tON Turnon time CL = 1 µF, RL= 100 Ω, (see Figure 15) 9 ms
tOFF Turnoff time CL = 1 µF, RL= 100 Ω, (see Figure 15) 6 ms
tIOS Response time to short circuit(2) VIN = 5 V (see Figure 16) 3.5 µs

Typical Characteristics

TPS2556 TPS2557 turnon_dly_lvs841.gif Figure 1. Turnon Delay and Rise Time
TPS2556 TPS2557 ena_sht_cir_lvs841.gif Figure 3. Device Enabled into Short-Circuit
TPS2556 TPS2557 full_ld_rec_lvs841.gif Figure 5. Short-Circuit to Full-Load Recovery Response
TPS2556 TPS2557 iin_tj_lvs931.gif Figure 7. Supply Current, Output Disabled
TPS2556 TPS2557 insup_vin_lvs931.gif Figure 9. Supply Current, Output Enabled
TPS2556 TPS2557 ids_vds_lvs931.gif Figure 11. Switch Current vs Drain-Source Voltage
Across Switch
TPS2556 TPS2557 swi_drain_lvs931.gif Figure 13. Switch Current vs Drain-Source Voltage Across Switch
TPS2556 TPS2557 turnoff_dly_lvs841.gif Figure 2. Turnoff Delay and Fall Time
TPS2556 TPS2557 full_ld_lvs841.gif Figure 4. Full-Load to Short-Circuit Transient Response
TPS2556 TPS2557 uvlo_tj_lvs931.gif Figure 6. Undervoltage Lockout
TPS2556 TPS2557 iin2_tj_lvs931.gif Figure 8. Supply Current, Output Enabled
TPS2556 TPS2557 rdson_tj_lvs931.gif Figure 10. MOSFET rDS(ON) vs Junction Temperature
TPS2556 TPS2557 ids2_vds_lvs931.gif Figure 12. Switch Current vs Drain-Source Voltage
Across Switch