JAJSHI6G June 2018 – July 2021 TPS25830-Q1 , TPS25831-Q1
PRODUCTION DATA
DP_IN and DM_IN protection consists of IEC ESD and overvoltage protection.
The DP_IN and DM_IN pins integrate an IEC ESD cell to provide ESD protection up to ±15-kV air discharge and ±8-kV contact discharge per IEC 61000-4-2 (See the ESD Ratings section for test conditions). The IEC ESD performance of the TPS2583x-Q1 device depends on the capacitance connected from BUS pin to GND. A 0.22-µF capacitor placed close to the BUS pin is recommended.
The ESD stress seen at DP_IN and DM_IN is impacted by many external factors like the parasitic resistance and inductance between ESD test points and the DP_IN and DM_IN pins. For air discharge, the temperature and humidity of the environment can cause some difference, so the IEC performance should always be verified in the end-application circuit.
Overvoltage protection (OVP) is provided for short-to-VBUS or short-to-battery conditions in the vehicle harness, preventing damage to the upstream USB transceiver or hub. When the voltage on DP_IN or DM_IN exceeds 3.9 V (typical), the TPS2583x-Q1 device immediately turn off DP/DM switch, and responds to block the high-voltage reverse connection to DP_OUT and DM_OUT. FAULT signal will assert after 8ms deglitch time, see Figure 11-35.
For DP_IN and DM_IN, when OVP is triggered, the device turns on an internal discharge path with 416-kΩ resistance to ground. On removal of the overvoltage condition, the pin automatically turns off this discharge path and returns to normal operation by turning on the previously affected analog switch.