JAJSQU2A August   2023  – October 2023 TPS25983

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Protection (UVLO and UVP)
      2. 8.3.2 Overvoltage Protection (OVP)
      3. 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.3.1 Slew Rate and Inrush Current Control (dVdt)
        2. 8.3.3.2 Circuit Breaker
        3. 8.3.3.3 Active Current Limiting
        4. 8.3.3.4 Short-Circuit Protection
      4. 8.3.4 Overtemperature Protection (OTP)
      5. 8.3.5 Analog Load Current Monitor (IMON)
      6. 8.3.6 Power Good (PG)
      7. 8.3.7 Reverse Current Blocking FET Driver
      8. 8.3.8 Fault Response
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Standby Power Rail Protection in Datacenter Servers
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting the Current Limit Threshold: RILIM Selection
        3. 9.2.2.3 Setting the Undervoltage and Overvoltage Lockout Set Point
        4. 9.2.2.4 Choosing the Current Monitoring Resistor: RIMON
        5. 9.2.2.5 Setting the Output Voltage Ramp Time (TdVdt)
          1. 9.2.2.5.1 Case 1: Start-Up Without Load: Only Output Capacitance COUT Draws Current
          2. 9.2.2.5.2 Case 2: Start-Up With Load: Output Capacitance COUT and Load Draw Current
        6. 9.2.2.6 Setting the Transient Overcurrent Blanking Interval (tITIMER)
        7. 9.2.2.7 Setting the Auto-Retry Delay and Number of Retries
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 Optical Module Power Rail Path Protection
        1. 9.3.1.1 Design Requirements
        2. 9.3.1.2 Device Selection
        3. 9.3.1.3 External Component Settings
        4. 9.3.1.4 Voltage Drop
        5. 9.3.1.5 Application Curves
      2. 9.3.2 Input Protection for 12-V Rail Applications: PCIe Cards, Storage Interfaces, and DC Fans
      3. 9.3.3 Priority Power MUXing
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output Short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.5 Electrical Characteristics

(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, VEN/UVLO = 2 V, RILIM = 1650 Ω , CdVdT = Open, OUT = Open. All voltages referenced to GND. 
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY (IN)
VIN Input voltage range 2.7 26 V
IQ(ON) IN quiescent current VEN ≥ VUVLO(R) 800 1000 µA
IQ(OFF) IN OFF current VSD(F) < VEN < VUVLO 204 300 µA
ISD IN shutdown current VEN < VSD(F) 3.7 15 µA
VUVP IN undervoltage protection threshold VIN rising 2.53 V
VIN falling 2.42 V
OUTPUT CURRENT MONITOR (IMON)
GIMON Current monitor gain (IIMON:IOUT) 3 A ≤ IOUT ≤ min(18 A, ILIM) 235.29 243 249.63 µA/A
OUTPUT CURRENT LIMIT (ILIM)
ILIM IOUT current limit threshold RILIM = 773 Ω 1.526 2.03 2.48 A
RILIM = 300 Ω 4.36 4.98 5.66 A
RILIM = 182 Ω 7.1 8.13 8.96 A
RILIM = 100 Ω 12.6 14.729 16.23 A
RILIM = 84 Ω 16.3 17.526 18.8 A
RILIM = Open 0 A
ICB IOUT circuit-breaker threshold during ILIM pin short to GND condition (Single point failure) RILIM = Short to GND, TJ = 25℃ 15 A
VFB VOUT voltage threshold for current limit foldback 0.91 V
IFT Short-circuit fast trip threshold (Steady-state) PG asserted 86.4 A
ISC Short-circuit fast trip threshold (Inrush) PG de-asserted 210 % ILIM
ON-RESISTANCE (IN - OUT)
RON IN-OUT ON resistance TJ = 25℃, IOUT = 2 A 2.7 3.2 mΩ
TJ = -40 to 125℃, IOUT = 2 A 4.5 mΩ
ENABLE / UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLO(R) EN/UVLO pin voltage threshold to turn OFF FET VEN rising 1.18 1.2 1.23 V
VUVLO(F) VEN falling 1.08 1.1 1.13 V
VSD(F) EN/UVLO pin voltage threshold for lowest shutdown current VEN falling 0.59 0.8 V
IENLKG EN/UVLO pin leakage current 0.13 µA
OVERVOLTAGE PROTECTION (OVLO)
VOV(R) OVLO pin voltage threshold VOVLO rising 1.1 1.21 1.25 V
VOV(F) VOVLO falling 1.08 1.1 1.125 µA
POWER GOOD INDICATION (PG)
VPGD PG pin low voltage (PG de-asserted) VIN < VUVP(F), VEN < VSD(F), IPG = 26 µA 651 786 mV
VIN = 3.3 V, IPG ≤ 5 mA 320 mV
VIN ≥ 5 V, IPG ≤ 5 mA 90 mV
IPGLKG PG pin leakage current (PG asserted) PG pulled up to 5 V through 10 kΩ 1.7 µA
RON(PGA) RON when PG is asserted 4.2 6.4 mΩ
VPGTHD VIN - VOUT threshold when PG is de-asserted 0.217 0.326 0.451 V
AUTO-RETRY DELAY INTERVAL (RETRY_DLY)
VRETRY_DLY(R) RETRY_DLY oscillator comparator threshold 0.95 1.1 1.19 V
VRETRY_DLY(F) 0.25 0.35 0.43 V
VRETRY_DLY_HYS RETRY_DLY oscillator hysteresis 0.69 0.75 0.81 V
IRETRY_DLY RETRY_DLY pin bias current 1.7 2.05 3.25 µA
NUMBER OF AUTO-RETRIES (NRETRY)
VNRETRY(R) NRETRY oscillator comparator threshold 0.95 1.1 1.19 V
VNRETRY(F) 0.24 0.35 0.445 V
VNRETRY_HYS NRETRY oscillator hysteresis 0.7 0.75 0.811 V
INRETRY NRETRY pin bias current 1.7 2.05 3.25 µA
CURRENT FAULT TIMER (ITIMER)
IITIMER ITIMER pin discharge current IFT > IOUT > ILIM 1.48 2.1 2.65 µA
RITIMER ITIMER internal pull-up resistance IOUT < ILIM 15 23 33 kΩ
VINT ITIMER pin internal pull-up voltage IOUT < ILIM 2.3 2.5 2.7 V
ΔVITIMER ITIMER discharge differential voltage threshold IFT > IOUT > ILIM, ITIMER voltage falling 0.8 0.98 1.15 V
OVERTEMPERATURE PROTECTION
TSD Thermal shutdown threshold TJ Rising 150 °C
TSDHys Thermal shutdown hysteresis TJ Falling 10 °C
dVdT/BGATE
IdVdt dVdT/BGATE pin charging current during inrush 3.6 4.76 6 µA