JAJSM08B December   2022  – August 2024 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 Working Mode
    4. 8.4 Feature Description
      1. 8.4.1 Accurate Current Sense
        1. 8.4.1.1 High Accuracy Sense Mode
      2. 8.4.2 Programmable Current Limit
        1. 8.4.2.1 Short-Circuit and Overload Protection
        2. 8.4.2.2 Capacitive Charging
      3. 8.4.3 Inductive-Load Switching-Off Clamp
      4. 8.4.4 Inductive Load Demagnetization
      5. 8.4.5 Full Protections and Diagnostics
        1. 8.4.5.1 Open-Load Detection
        2. 8.4.5.2 Thermal Protection Behavior
        3. 8.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.4.5.4 Overvoltage (OVP) Protection
        5. 8.4.5.5 Reverse Polarity Protection
        6. 8.4.5.6 Protection for MCU I/Os
        7. 8.4.5.7 Diagnostic Enable Function
        8. 8.4.5.8 Loss of Ground
        9. 8.4.5.9 Enhanced EFT Immunity
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 PWP Layout without a GND Network
        2. 9.4.2.2 PWP Layout with a GND Network
        3. 9.4.2.3 RGW Layout with a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 ドキュメントの更新通知を受け取る方法
    2. 10.2 サポート・リソース
    3. 10.3 Trademarks
    4. 10.4 静電気放電に関する注意事項
    5. 10.5 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

VS = 6 V to 36 V, TA= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VS SUPPLY VOLTAGE AND CURRENT
ILNOM Continuous load current VEN = HI TAMB = 85°C 6 A
ISTBY, VS Total device standby current (including MOSFET) with diagnostics disabled (Ver. A, B, C, D) VS ≤ 36  V,  VEN = VDIAG_EN = LO, VOUT = 0 V TJ = -40°C to 85°C 0.25 0.7 µA
Total device standby current (including MOSFET) with diagnostics disabled (Ver. A, B, C, D) VS ≤ 36  V, VEN = VDIAG_EN = LO, VOUT = 0 V TJ = 150°C 0.63 6 µA
ISTBY, VS_DIAG VS standby current with diagnostics enabled (Ver. A, B, C, D) VS ≤ 36 V, VEN = LO, VDIAG_EN = HI, VOUT = 0 V 1.2 1.5 mA
IQ(OFF), VS VS quiescent during OFF state (Ver. E) VS ≤ 60 V, 
VEN = 0 V,  VOUT = 24V, VDIAG = 0V		 TJ = -40°C to 85°C 0.95 mA
TJ = 125°C 0.98 mA
IQ, VS VS quiescent current with diagnostics disabled VEN = HI, VDIAG_EN = LO IOUT = 0A 0.98 1.3 mA
IQ, VS_DIAG VS quiescent current with diagnostics enabled VENx = HI, VDIAG_EN = HI IOUT = 0A 1.0 1.5 mA
tSTBY Standby mode delay time (Ver. A, B, C, D) VEN = VDIAG_EN = 0 V to standby 20 ms
IOUT(OFF) Output leakage current (Ver. A, B, C, D) VS ≤ 36  V, 
VEN = VDIAG_EN = 0 V, VOUT = 0 V		 TJ = 85°C 0.4 µA
TJ =  125°C 0.5 6 µA
IOUT(OFF) Output leakage current (Ver. E) VS ≤ 36  V, 
VEN = VDIAG_EN = 0 V, VOUT = 0 V		 TJ = –40°C to 85°C 28 µA
TJ = 125°C 28 µA
VS ≤ 36  V, 
VEN = VDIAG_EN = 0 V, VOUT = 10 V		 TJ = -40°C to 85°C -6 9 µA
TJ = 125°C -10 10 µA
tEFT_DELAY Delay for EFT protection after device turnoff (Ver. E) VS ≤ 60 V, 
VEN = 0 V,  VOUT floating, VDIAG = 0V		 TJ = -40°C to 125°C 270 µs
VS UNDERVOLTAGE LOCKOUT (UVLO) INPUT
VS,UVLOR VS undervoltage lockout rising Measured with respect to the GND pin of the device 5.0 5.4 5.75 V
VS,UVLOF VS undervoltage lockout falling Measured with respect to the GND pin of the device 4.1 4.5 4.85 V
VS OVERVOLTAGE LOCKOUT (OVLO) INPUT
VS,OVPR VS overvoltage protection rising (Ver. A, B, C, D) Measured with respect to the GND pin of the device, VEN = 5V 51 54 57 V
VS overvoltage protection rising (Ver. E) Measured with respect to the GND pin of the device, VEN = 5V 50 54 57 V
VS,OVPF VS overvoltage protection recovery falling Measured with respect to the GND pin of the device, VEN = 5V 49 52 56 V
VS,OVPH VS overvoltage protection threshold hysteresis Measured with respect to the GND pin of the device, VEN = 5V 1.5 V
tVS,OVP VS overvoltage protection deglitch time Time from triggering the OVP fault to FET turn-off 110 160 µs
VDS CLAMP
VDS,Clamp VDS clamp voltage Version A, B FET current = 10 mA VS = 24 V 65 72.5 80 V
VS = 6 V 48 53 58 V
RON CHARACTERISTICS
RON VS to VOUT On-resistance Version B, D, E = 0.5A ≤ IOUT ≤ 6A, A,C = 0.5A ≤ IOUT ≤ 3A VS = 24V  TJ = 25°C 29 mΩ
TJ = 125°C 55 mΩ
RON(REV) On-resistance during reverse polarity Version B, D, E = 0.5A ≤ IOUT ≤ 6A, A,C = 0.5A ≤ IOUT ≤ 3A VS = -24V TJ = -40°C to 125°C 30 60 mΩ
RON_AUXFET VS to VOUT On-resistance
High Accuracy Sense Mode		 VS = 24V, IOUT = 40 mA
 OL_ON=DIAG_EN=5V		 TJ = -40°C to 125°C 5.2 12 Ω
CURRENT LIMIT CHARACTERISTICS
KCL Current Limit Ratio Device Version A, C RILIM = 10kΩ to 50kΩ 40 50 60 A * kΩ
Device Version B, D, E RILIM = 10kΩ to 50kΩ 80 100 120 A * kΩ
ILIM_STARTUP Peak current prior to regulation when switch is enabled Device Version A, C RILIM = 10kΩ to 50kΩ 2x ICL 6.5 A
Device Version B, D, E RILIM = 10kΩ to 50kΩ 2x ICL 14 A
tLIM_STARTUP_DELAY Peak current delay time prior to regulation when switch is enabled
 		 7 12 ms
ICL Current Limit level Device Version A, C Short circuit condition RILIM = 50 kΩ 0.8 1 1.2 A
RILIM = 25 kΩ 1.8 2 2.2 A
RILIM = 16.7 kΩ 2.7 3 3.3 A
RILIM = 12.5 kΩ 3.6 4 4.4 A
RILIM = 10 kΩ 4.5 5 5.5 A
RILIM = GND, open, or out of range(<9kΩ, and >100kΩ) 0.5 0.8 A
ICL Current Limit level Device Version B, D Short circuit condition RILIM = 50 kΩ 1.85 2 2.5 A
RILIM = 25 kΩ 3.7 4 4.6 A
RILIM = 16.7 kΩ 5.6 6 6.6 A
RILIM = 12.5 kΩ 7.2 8 8.8 A
RILIM = 10 kΩ 9 10 11 A
RILIM = GND, open, or out of range(<9kΩ, and >100kΩ) 0.2 0.5 1 A
ICL Current Limit level Device Version E Short circuit condition RILIM = 50 kΩ 1.7 2 2.3 A
RILIM = 25 kΩ 3.6 4 4.4 A
RILIM = 16.7 kΩ 5.4 6 6.6 A
RILIM = 12.5 kΩ 7.1 8 8.9 A
RILIM = 10 kΩ 8.8 10 11.2 A
RILIM = GND, open, or out of range(<9kΩ, and >100kΩ) 0.3 0.5 0.8 A
ICL_LINPK Overcurrent Limit Threshold(1) Overload condition RILIM = 10 kΩ to 50kΩ 1.3x ICL A
IILIM_ENPS Peak current enabling into permanent short RILIM = 10 kΩ 2x ICL A
IILIM_ENPS2 Peak current enabling into permanent short RILIM = 10kΩ, t < ILIM_STARTUP_DELAY ILIM_STARTUP A
VILIM_OVP ILIM Switchover threshold during overvoltage Rising 37 40 43 V
Hysteresis 2 V
IILIM_OVP ILIM Current Limit threshold during overvoltage Overload condition  RILIM = X, VVS ≥ VILIM_OVP 0 0.552 1.5 A
tIOS Short circuit response time VS = 24V 0.5 μs
IILIM_OVERVOLTAGE ILIM Current Limitation threshold during overvoltage  Overload condition when VS > 36V(1) RILIM = X, 48V ≥ VVS ≥ 36V 5.25 A
THERMAL SHUTDOWN CHARACTERISTICS
TABS Thermal shutdown 175 185 195 °C
TREL Relative thermal shutdown 77 °C
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown). 1.4 2.1 3 ms
Fault Response Fault reponse to Thermal Shutdown Auto-retry
THYS Absolute Thermal shutdown hysteresis 10 °C
FAULT PIN CHARACTERISTICS
ICL_FAULT_R(2) ICL Current Limit Fault Assertion Threshold (Ver. A, B, C, D) VDIAG_EN = 5 V, VOL_ON = 0 V Rising 0.90xICL 0.95xICL A
ICL Current Limit Fault Assertion Threshold (Ver. E) VDIAG_EN = 5 V, VOL_ON = 0 V Rising 0.77xICL 0.92xICL A
ICL_FAULT_F(2) ICL Fault De-Assertion Threshold (Ver. A, B, C, D) VDIAG_EN = 5 V, VOL_ON = 0 V Falling 0.85xICL 0.90xICL A
ICL Fault De-Assertion Threshold (Ver. E) VDIAG_EN = 5 V, VOL_ON = 0 V Falling 0.72xICL 0.86xICL A
VFAULT FAULT low output voltage IFAULT = 2.5 mA 0.5 V
tFAULT_BLANKING Fault blanking time during startup VDIAG_EN = 5 V, VEN = 0 to 5 V 12 ms
tFAULT_FLT Fault indication-time Time between fault and FAULT asserting 75 µs
tFAULT_SNS Fault indication-time (Ver. A, B, C, D) VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 95 µs
Fault indication-time (Ver. E) VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 98 µs
CURRENT SENSE CHARACTERISTICS
IKSNS2_EN Load current supported to enable KSNS2 when in KSNS1 Mode (Ver. A, B, C, D) VEN = VDIAG_EN = 5 V, VOL_ON = GND 42 50 70 mA
Load current supported to enable KSNS2 when in KSNS1 Mode (Ver. E) VEN = VDIAG_EN = 5 V, VOL_ON = GND 39 50 70 mA
IKSNS2_DIS Load current to disable KSNS2 when in KSNS2 Mode (Ver. A, B, C, D) VEN = VDIAG_EN = 5 V, VOL_ON = GND 75 85 105 mA
Load current to disable KSNS2 when in KSNS2 Mode (Ver. E) VEN = VDIAG_EN = 5 V, VOL_ON = GND 74 85 96 mA
KSNS Current sense ratio - Standard Sensing
IOUT / ISNS		 IOUT = 2 A, VOL_ON = GND 1300 A/A
KSNS2 Current sense ratio - High Accuracy Sensing
IOUT / ISNS		 IOUT = 30mA, VOL_ON = 5V 24.6 A/A
ISNS Current sense current and accuracy VEN = VDIAG_EN = 5 V, VOL_ON = GND IOUT = 7A 5.38 mA
-6 6 %
IOUT = 6 A 4.61 mA
-6 6 %
IOUT = 4 A 3.0 mA
–4 4 %
IOUT = 2 A   1.533   mA
–4 4 %
IOUT = 1 A   0.764   mA
–4 4 %
IOUT = 500 mA   0.380   mA
-6 6 %
IOUT = 200 mA 0.150   mA
-10 10 %
IOUT = 100 mA   0.073   mA
-15 15 %
IOUT = 50 mA 0.034 mA
-25 25 %
ISNS2 Current sense current and accuracy for high accuracy sense mode VEN = VDIAG_EN = 5 V, VOL_ON = 5V IOUT = 40 mA 1.62 mA
-6 6 %
IOUT = 20 mA 0.833 mA
-6 6 %
IOUT = 10 mA 0.404 mA
-10 10 %
IOUT = 4 mA 0.161 mA
-12.5 12.5 %
IOUT = 2 mA 0.0800 mA
-15 15 %
IOUT = 1 mA 0.0395 mA
-20 20 %
SNS PIN CHARACTERISTICS
VSNSFH VSNS fault high-level VDIAG_EN = 5 V 4.5 5 5.77 V
VDIAG_EN = 3.3 V, RSNS=Open 3.5 3.95 4.4 V
VDIAG_EN = VIH  2.8 3.66 3.8 V
ISNSFLT ISNS fault high-level VDIAG_EN > VIH,DIAG_EN 5.8 6.4 mA
ISNSFLT ISNS fault high-level (Ver. E) VDIAG_EN > VIH,DIAG_EN VDIAG_EN > VIH,DIAG_EN 5.3 6.4 mA
ISNSleak ISNS leakage VDIAG_EN = 5 V, IL = 0 mA 1.3 µA
VS_ISNS VS headroom needed for full current sense and fault functionality (Ver. A, B, C, D) VDIAG_EN = 3.3V 5.8 V
VS headroom needed for full current sense and fault functionality VDIAG_EN = 5V 6.5 V
VS_ISNS VS headroom needed for full current sense and fault functionality (Ver. E) VDIAG_EN = 3.3V 6 V
OPEN LOAD DETECTION CHARACTERISTICS
VOL_OFF OFF state open-load (OL) detection voltage VEN = 0 V, VDIAG_EN = 5 V 1.5 2 2.5 V
ROL_OFF OFF state open-load (OL) detection internal pull-up resistor VEN = 0 V, VDIAG_EN = 5 V 120 150 180 kΩ
tOL_OFF OFF state open-load (OL) detection deglitch time VEN = 0 V, VDIAG_EN = 5 V, When Vs – VOUT < VOL, duration longer than tOL. Open load detected. 480 700 µs
tOL_OFF_1 OL_OFF and STB indication-time from EN falling VEN = 5 V to 0 V, VDIAG_EN = 5 V
IOUT = 0 mA, VOUT = Vs - VOL		 310 700 µs
tOL_OFF_2 OL and STB indication-time from DIA_EN rising VEN = 0 V, VDIAG_EN = 0 V to 5 V
IOUT = 0 mA, VOUT = VS - VOL		 700 µs
OL_ON PIN CHARACTERISTICS
VIL, OL_ON Input voltage low-level 0.8 V
VIH, OL_ON Input voltage high-level 1.5 V
VIHYS, OL_ON Input voltage hysteresis 282 mV
ROL_ON Internal pulldown resistor 0.7 1 1.3 MΩ
IIL_OL_ON Input current low-level VOL_ON = -1 V –25 0 µA
IIL, OL_ON Input current low-level VOL_ON = 0.8 V 0.6 0.8 1.2 µA
IIH, OL_ON Input current high-level VOL_ON = 5 V 3 5 7 µA
DIAG_EN PIN CHARACTERISTICS
VIL, DIAG_EN Input voltage low-level No GND Network 0.8 V
VIH, DIAG_EN Input voltage high-level No GND Network 1.5 V
VIHYS, DIAG_EN Input voltage hysteresis 270 mV
RDIAG_EN Internal pulldown resistor 200 350 500 kΩ
IIL, DIAG_EN Input current low-level (A, B, C, D version) VDIAG_EN = 0.8 V,  VEN=0V 0.8 µA
Input current low-level (E version) VDIAG_EN = 0.8 V,  VEN=0V 2.9 3.8 µA
IIH, DIAG_EN Input current high-level VDIAG_EN = 5 V 14 µA
EN PIN CHARACTERISTICS
VIL, EN Input voltage low-level No GND Network 0.8 V
VIH, EN Input voltage high-level No GND Network 1.5 V
VIHYS, EN Input voltage hysteresis 280 mV
REN Internal pulldown resistor 200 350 500 kΩ
IIL, EN Input current low-level VEN = 0.8 V 2.2 µA
IIH, EN Input current high-level VEN = 5 V 14 µA
(1) The maximum current output under overload condition before current limit regulation
(2) Not tested in production.