JAJSM08B December   2022  – August 2024 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 Working Mode
    4. 8.4 Feature Description
      1. 8.4.1 Accurate Current Sense
        1. 8.4.1.1 High Accuracy Sense Mode
      2. 8.4.2 Programmable Current Limit
        1. 8.4.2.1 Short-Circuit and Overload Protection
        2. 8.4.2.2 Capacitive Charging
      3. 8.4.3 Inductive-Load Switching-Off Clamp
      4. 8.4.4 Inductive Load Demagnetization
      5. 8.4.5 Full Protections and Diagnostics
        1. 8.4.5.1 Open-Load Detection
        2. 8.4.5.2 Thermal Protection Behavior
        3. 8.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.4.5.4 Overvoltage (OVP) Protection
        5. 8.4.5.5 Reverse Polarity Protection
        6. 8.4.5.6 Protection for MCU I/Os
        7. 8.4.5.7 Diagnostic Enable Function
        8. 8.4.5.8 Loss of Ground
        9. 8.4.5.9 Enhanced EFT Immunity
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 PWP Layout without a GND Network
        2. 9.4.2.2 PWP Layout with a GND Network
        3. 9.4.2.3 RGW Layout with a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 ドキュメントの更新通知を受け取る方法
    2. 10.2 サポート・リソース
    3. 10.3 Trademarks
    4. 10.4 静電気放電に関する注意事項
    5. 10.5 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.7 Switching Characteristics

VS = 24 V, TJ = -40 °C to +125 °C (unless otherwise noted), COUT = 22 nF
Parameter Test Conditions Min Typ Max
Unit
tDR Turnon delay time (from standby, Ver. A, B, C, D) VS = 24 V, RL = 48 Ω 50% of EN to 20% of VOUT 35 55 µs
Turnon delay time (from delay or diagnostic, Ver. A, B, C, D) VS = 24 V, RL = 48 Ω 50% of EN to 20% of VOUT 25 45 µs
Turnon delay time (from delay or diagnostic, Ver. E) VS = 24 V, RL = 48 Ω 50% of EN to 20% of VOUT 49 60 µs
tDF Turnoff delay time (Ver. A, B, C, D) VS = 24 V, RL = 48 Ω 50% of EN to 80% of VOUT 35 50 µs
Turnoff delay time (Ver. E) VS = 24 V, RL = 48 Ω 50% of EN to 80% of VOUT 40 55 µs
SRR VOUT rising slew rate VS = 24 V, 20% to 80% of VOUT,
RL = 48 Ω		 0.4 0.7 0.95 V/µs
SRF VOUT falling slew rate VS = 24 V, 80% to 20% of VOUT,
RL = 48 Ω		 0.4 0.8 1.2 V/µs
fmax Maximum PWM frequency 1 kHz
tON Turnon time (Ver. A, B, C, D) VS = 24 V, RL = 48 Ω  50% of EN to 80% of VOUT 55 75 µs
Turnon time (Ver. E) VS = 24 V, RL = 48 Ω  50% of EN to 80% of VOUT 69 96 µs
tOFF Turnoff time (Ver. A, B, C, D) VS = 24 V, RL = 48 Ω  50% of EN to 20% of VOUT 60 70 µs
Turnoff time (Ver. E) VS = 24 V, RL = 48 Ω  50% of EN to 20% of VOUT 60 80 µs
tON - tOFF Turnon and off matching (Ver. A, B, C, D) 1ms ON time switch enable pulse Vs = 24 V, RL = 48 Ω –25 45 µs
Turnon and off matching (Ver. E) 100-µs ON time switch enable pulse, VS = 24 V, RL = 48 Ω, F = fmax 5 68 µs
ΔPWM PWM accuracy - average load current 200-µs enable pulse, VS = 24 V, RL = 48 Ω 
F = fmax		 -15 15 %
EON Switching energy losses during turnon VS = 24 V, RL = 8 Ω, 1 ms pulse, VOUT from 20% to 80% of VS voltage 0.5 mJ
EOFF Switching energy losses during turnoff VS = 24 V, RL = 8 Ω, 1 ms pulse, VOUT from 80% to 20% of VS voltage 0.25 mJ