JAJSRX9C January 2012 – November 2023 TPS40170-Q1
PRODUCTION DATA
Power-device selection is important for proper switching operation. If the low-side MOSFET has low gate capacitance Cgs (if Cgs < Cgd), there is a risk of short-through induced by high dv/dt at the switching node during high-side turnon. If this happens, add a small capacitance between LDRV and GND. See the Design Examples section.