SLUSFM1 December   2024 TPS4812-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, GATE, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 Using Low-Power Bypass FET (G Drive) for Load Capacitor Charging
        2. 8.3.2.2 Using Main FET (GATE Drive) Gate Slew Rate Control
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 I2t-Based Overcurrent Protection
          1. 8.3.3.1.1 I2t-Based Overcurrent Protection With Auto-Retry
          2. 8.3.3.1.2 I2t-Based Overcurrent Protection With Latch-Off
        2. 8.3.3.2 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 NTC-Based Temperature Sensing (TMP) and Analog Monitor Output (ITMPO)
      6. 8.3.6 Fault Indication and Diagnosis (FLT)
      7. 8.3.7 Reverse Polarity Protection
      8. 8.3.8 Undervoltage Protection (UVLO)
    4. 8.4 Device Functional Modes
      1. 8.4.1 State Diagram
      2. 8.4.2 State Transition Timing Diagram
      3. 8.4.3 Power Down
      4. 8.4.4 Shutdown Mode
      5. 8.4.5 Low Power Mode (LPM)
      6. 8.4.6 Active Mode (AM)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application 1: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application 2: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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発注情報

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input pins VS, CS1+, CS1–, DRN, CS2–, ISCP, TMP to GND –65 100 V
Input pins VS, CS1+, CS1–, DRN, CS2–, ISCP, TMP to SRC –65 100 V
Input pins SRC to GND –65 100 V
Input pins GATE, G, BST to SRC –0.3 19 V
Input pins TMR to GND –0.3 5.5 V
Input pins IOC to GND, TPS48120-Q1 only –1 5.5 V
Input pins EN/UVLO, INP, LPM; V(VS) > 0 V –1 100 V
Input pins EN/UVLO, INP, LPM; V(VS) ≤ 0 V V(VS) (100 + V(VS)) V
Input pins CS1+ to CS1– –0.3 0.4 V
Input pins DRN to CS2– –5 100 V
Output pins FLT, I_DIR, WAKE to GND –1 20 V
Output pins IMON to GND –1 5.5 V
Output pins I2t, ITMPO to GND, TPS48120-Q1 only –1 7.5 V
Output pins ITMPO to GND, TPS48121-Q1 only –1 7.5 V
Output pins GATE, G, BST to GND –65 112 V
Sink current I(FLT), I(I_DIR), I(WAKE) 10 mA
Sink current I(CS1+) to I(CS1–), 1msec ; I(DRN) to I(CS2–), 1msec 100 mA
Operating junction temperature, Tj(2) –40 150 °C
Storage temperature, Tstg –40 150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.