JAJSHA3K December   2012  – May 2019 TPS50301-HT

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      効率と負荷電流との関係：VIN = 5V
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and Power VIN Pins (VIN and PVIN)
      2. 8.3.2  PVIN vs Frequency
      3. 8.3.3  Voltage Reference
      4. 8.3.4  Adjusting the Output Voltage
      5. 8.3.5  Maximum Duty Cycle Limit
      6. 8.3.6  PVIN vs Frequency
      7. 8.3.7  Safe Start-Up into Prebiased Outputs
      8. 8.3.8  Error Amplifier
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Enable and Adjust UVLO
      11. 8.3.11 Adjustable Switching Frequency and Synchronization (SYNC)
      12. 8.3.12 Slow Start (SS/TR)
      13. 8.3.13 Power Good (PWRGD)
      14. 8.3.14 Bootstrap Voltage (BOOT) and Low Dropout Operation
      15. 8.3.15 Sequencing (SS/TR)
      16. 8.3.16 Output Overvoltage Protection (OVP)
      17. 8.3.17 Overcurrent Protection
        1. 8.3.17.1 High-Side MOSFET Overcurrent Protection
        2. 8.3.17.2 Low-Side MOSFET Overcurrent Protection
      18. 8.3.18 TPS50301-HT Thermal Shutdown
      19. 8.3.19 Turn-On Behavior
      20. 8.3.20 Small Signal Model for Loop Response
      21. 8.3.21 Simple Small Signal Model for Peak Current Mode Control
      22. 8.3.22 Small Signal Model for Frequency Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Fixed-Frequency PWM Control
      2. 8.4.2 Continuous Current Mode (CCM) Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Operating Frequency
        3. 9.2.2.3  Output Inductor Selection
        4. 9.2.2.4  Output Capacitor Selection
        5. 9.2.2.5  Input Capacitor Selection
        6. 9.2.2.6  Slow Start Capacitor Selection
        7. 9.2.2.7  Bootstrap Capacitor Selection
        8. 9.2.2.8  Undervoltage Lockout (UVLO) Set Point
        9. 9.2.2.9  Output Voltage Feedback Resistor Selection
          1. 9.2.2.9.1 Minimum Output Voltage
        10. 9.2.2.10 Compensation Component Selection
      3. 9.2.3 Parallel Operation
      4. 9.2.4 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
        1. 12.1.1.1 WEBENCH®ツールによるカスタム設計
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報
    1. 13.1 デバイスの項目表記

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.16 Output Overvoltage Protection (OVP)

The device incorporates an output OVP circuit to minimize output voltage overshoot. For example, when the power supply output is overloaded, the error amplifier compares the actual output voltage to the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a considerable time, the output of the error amplifier demands maximum output current. After the condition is removed, the regulator output rises and the error amplifier output transitions to the steady-state voltage. In some applications with small output capacitance, the power supply output voltage can respond faster than the error amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP threshold, the high-side MOSFET is turned off, preventing current from flowing to the output and minimizing output overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to turn on at the next clock cycle.