JAJSHA3K December   2012  – May 2019 TPS50301-HT

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      効率と負荷電流との関係：VIN = 5V
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dissipation Ratings
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and Power VIN Pins (VIN and PVIN)
      2. 8.3.2  PVIN vs Frequency
      3. 8.3.3  Voltage Reference
      4. 8.3.4  Adjusting the Output Voltage
      5. 8.3.5  Maximum Duty Cycle Limit
      6. 8.3.6  PVIN vs Frequency
      7. 8.3.7  Safe Start-Up into Prebiased Outputs
      8. 8.3.8  Error Amplifier
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Enable and Adjust UVLO
      11. 8.3.11 Adjustable Switching Frequency and Synchronization (SYNC)
      12. 8.3.12 Slow Start (SS/TR)
      13. 8.3.13 Power Good (PWRGD)
      14. 8.3.14 Bootstrap Voltage (BOOT) and Low Dropout Operation
      15. 8.3.15 Sequencing (SS/TR)
      16. 8.3.16 Output Overvoltage Protection (OVP)
      17. 8.3.17 Overcurrent Protection
        1. 8.3.17.1 High-Side MOSFET Overcurrent Protection
        2. 8.3.17.2 Low-Side MOSFET Overcurrent Protection
      18. 8.3.18 TPS50301-HT Thermal Shutdown
      19. 8.3.19 Turn-On Behavior
      20. 8.3.20 Small Signal Model for Loop Response
      21. 8.3.21 Simple Small Signal Model for Peak Current Mode Control
      22. 8.3.22 Small Signal Model for Frequency Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Fixed-Frequency PWM Control
      2. 8.4.2 Continuous Current Mode (CCM) Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Operating Frequency
        3. 9.2.2.3  Output Inductor Selection
        4. 9.2.2.4  Output Capacitor Selection
        5. 9.2.2.5  Input Capacitor Selection
        6. 9.2.2.6  Slow Start Capacitor Selection
        7. 9.2.2.7  Bootstrap Capacitor Selection
        8. 9.2.2.8  Undervoltage Lockout (UVLO) Set Point
        9. 9.2.2.9  Output Voltage Feedback Resistor Selection
          1. 9.2.2.9.1 Minimum Output Voltage
        10. 9.2.2.10 Compensation Component Selection
      3. 9.2.3 Parallel Operation
      4. 9.2.4 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
        1. 12.1.1.1 WEBENCH®ツールによるカスタム設計
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報
    1. 13.1 デバイスの項目表記

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.17.2 Low-Side MOSFET Overcurrent Protection

While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side sourcing current is exceeded, the high-side MOSFET is not turned on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing current limit at the start of a cycle.

The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded, the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario, both MOSFETs are off until the start of the next cycle.

When the low-side MOSFET turns off, the switch node increases and forward biases the high-side MOSFET parallel diode (the high-side MOSFET is still off at this stage).