JAJSFB1C November   2009  – April 2018 TPS51200-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      標準のDDRアプリケーション
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Sink and Source Regulator (VO Pin)
      2. 7.3.2 Reference Input (REFIN Pin)
      3. 7.3.3 Reference Output (REFOUT Pin)
      4. 7.3.4 Soft-Start Sequencing
      5. 7.3.5 Enable Control (EN Pin)
      6. 7.3.6 Powergood Function (PGOOD Pin)
      7. 7.3.7 Current Protection (VO Pin)
      8. 7.3.8 UVLO Protection (VIN Pin)
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 S3 and Pseudo-S5 Support
      2. 7.4.2 Tracking Startup and Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 VTT DIMM Applications
        1. 8.2.1.1 Design Parameters
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VIN Capacitor
          2. 8.2.1.2.2 VLDO Input Capacitor
          3. 8.2.1.2.3 Output Capacitor
          4. 8.2.1.2.4 Output Tolerance Consideration for VTT DIMM Applications
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Design Example 1
        1. 8.2.2.1 Design Parameters
      3. 8.2.3 Design Example 2
        1. 8.2.3.1 Design Parameters
      4. 8.2.4 Design Example 3
        1. 8.2.4.1 Design Parameters
      5. 8.2.5 Design Example 4
        1. 8.2.5.1 Design Parameters
      6. 8.2.6 Design Example 5
        1. 8.2.6.1 Design Parameters
      7. 8.2.7 Design Example 6
        1. 8.2.7.1 Design Parameters
      8. 8.2.8 Design Example 7
        1. 8.2.8.1 Design Parameters
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

Over recommended free-air temperature range, VVIN = 3.3 V, VVLDOIN = 1.8 V, VREFIN = 0.9 V, VVOSNS = 0.9 V, VEN = VVIN, COUT = 3 × 10 μF and circuit shown in the 標準のDDRアプリケーション section (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IIN Supply current TA = 25 °C, VEN = 3.3 V, No Load 0.7 1 mA
IIN(SDN) Shutdown current TA = 25 °C, VEN = 0 V, VREFIN = 0, No Load 65 80 μA
TA = 25 °C, VEN = 0 V, VREFIN > 0.4 V, No Load 200 400
ILDOIN Supply current ofVLDOIN TA = 25 °C, VEN = 3.3 V, No Load 1 50 μA
ILDOIN(SDN) Shutdown current of VLDOIN TA = 25 °C, VEN = 0 V, No Load 0.1 50 μA
INPUT CURRENT
IREFIN Input current, REFIN VEN = 3.3 V 1 μA
VO OUTPUT
VVOSNS Output DC voltage, VO VREFOUT = 1.25 V (DDR1), IO = 0 A 1.25 V
–15 15 mV
VREFOUT = 0.9 V (DDR2), IO = 0 A 0.9 V
–15 15 mV
VREFOUT = 0.75 V (DDR3), IO = 0 A 0.75 V
–15 15 mV
VREFOUT = 0.675 V (DDR3L), IO = 0 A 0.675 V
-15 15 mV
VREFOUT = 0.6 V (DDR4), IO = 0 A 0.6 V
-15 15 mV
VVOTOL Output voltage tolerance to REFOUT –2A < IVO < 2A –25 25 mV
IVOSRCL VO source vurrent Limit With reference to REFOUT, VOSNS = 90% × VREFOUT 3 4.5 A
IVOSNCL VO sink current Limit With reference to REFOUT, VOSNS = 110% × VREFOUT 3.5 5.5 A
IDSCHRG Discharge current, VO VREFIN = 0 V, VVO = 0.3 V, VEN = 0 V, TA = 25°C 18 25 Ω
POWERGOOD COMPARATOR
VTH(PG) VO PGOOD threshold PGOOD window lower threshold with respect to REFOUT –23.5% –20% –17.5%
PGOOD window upper threshold with respect to REFOUT 17.5% 20% 23.5%
PGOOD hysteresis 5%
VPGOODLOW Output low voltage ISINK = 4 mA 0.4 V
IPGOODLK Leakage current(1) VOSNS = VREFIN (PGOOD high impedance), PGOOD = VIN + 0.2 V 1 μA
REFIN AND REFOUT
VREFIN REFIN voltage range 0.5 1.8 V
VREFINUVLO REFIN undervoltage lockout REFIN rising 360 390 420 mV
VREFINUVHYS REFIN undervoltage lockout hysteresis 20 mV
VREFOUT REFOUT voltage REFIN V
VREFOUTTOL REFOUT voltage tolerance to VREFIN –10 mA ≤ IREFOUT ≤ 10 mA, 0.6 V ≤ VREFIN ≤ 1.25 V –15 15 mV
–1 mA ≤ IREFOUT ≤ 1 mA, 0.6 V ≤ VREFIN ≤ 1.25 V –12 12
IREFOUTSRCL REFOUT source current limit VREFOUT = 0.5 V 10 40 mA
IREFOUTSNCL REFOUT sink current limit VREFOUT = 1.5 V 10 40 mA
UVLO / EN LOGIC THRESHOLD
VVINUVVIN UVLO threshold Wake up, TA = 25°C 2.2 2.3 2.375 V
Hysteresis 50 mV
VENIH High-level input voltage Enable 1.7 V
VENIL Low-level input voltage Enable 0.3 V
VENYST Hysteresis voltage Enable 0.5 V
IENLEAK Logic input leakage current EN, TA = 25°C –1 1 μA
THERMAL SHUTDOWN
TSON Thermal shutdown threshold(1) Shutdown temperature 150 °C
Hysteresis 25
(1) Ensured by design. Not production tested.