JAJSFV8A June   2018  – December  2018 TPS51200A-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      単純化されたDDRアプリケーション
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Sink and Source Regulator (VO Pin)
      2. 8.3.2 Reference Input (REFIN Pin)
      3. 8.3.3 Reference Output (REFOUT Pin)
      4. 8.3.4 Soft-Start Sequencing
      5. 8.3.5 Enable Control (EN Pin)
      6. 8.3.6 Powergood Function (PGOOD Pin)
      7. 8.3.7 Current Protection (VO Pin)
      8. 8.3.8 UVLO Protection (VIN Pin)
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 S3 and Pseudo-S5 Support
      2. 8.4.2 Tracking Startup and Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 VTT DIMM Applications
        1. 9.2.1.1 Design Parameters
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 VIN Capacitor
          2. 9.2.1.2.2 VLDO Input Capacitor
          3. 9.2.1.2.3 Output Capacitor
          4. 9.2.1.2.4 Output Tolerance Consideration for VTT DIMM Applications
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Design Example 1
        1. 9.2.2.1 Design Parameters
      3. 9.2.3 Design Example 2
        1. 9.2.3.1 Design Parameters
      4. 9.2.4 Design Example 3
        1. 9.2.4.1 Design Parameters
      5. 9.2.5 Design Example 4
        1. 9.2.5.1 Design Parameters
      6. 9.2.6 Design Example 5
        1. 9.2.6.1 Design Parameters
      7. 9.2.7 Design Example 6
        1. 9.2.7.1 Design Parameters
      8. 9.2.8 Design Example 7
        1. 9.2.8.1 Design Parameters
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 LDO Design Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11.1.1 LDO Design Guidelines

The minimum input to output voltage difference (headroom) decides the lowest usable supply voltage transconductance to drive a certain load. For device, a minimum of 300 mV (VLDOINMIIN – VOMAX) is needed to support a Gm driven sourcing current of 2 A based on a design of VIN = 3.3 V and COUT = 3 × 10 μF. Because the TPS51200A-Q1 device is essentially a Gm driven LDO, the impedance characteristics are both a function of the 1 / Gm and RDS(on) of the sourcing MOSFET (see Figure 33). The current inflection point of the design is between 2 A and 3 A. When ISRC is less than the inflection point, the LDO is considered to be operating in the Gm region; when ISRC is greater than the inflection point but less than the overcurrent limit point, the LDO is operating in the RDS(on) region. The maximum sourcing RDS(on) is 0.144 Ω with VIN = 3 V and TJ = 125°C.

TPS51200A-Q1 v08026_lus812.gifFigure 33. Impedance Characteristics