JAJSK76 September 2022 TPS51383
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT SUPPLY (VIN) | ||||||
VIN | Input voltage range | VIN | 4.5 | 24 | V | |
IVIN | VIN Supply Current (Quiescent) | VVIN = 12 V, No load, VEN = 3.3 V, non-switching | 80 | µA | ||
IINSDN | VIN Shutdown Current | VVIN = 12 V, No load, VEN = 0 V, PG open | 55 | µA | ||
UVLO | ||||||
VVCC UVLO_R | VCC Under-Voltage Lockout | VVCC rising | 4.2 | 4.42 | V | |
VVCC UVLO_F | VCC Under-Voltage Lockout | VVCC falling | 3.65 | 3.85 | V | |
VVCC UVLO_H | VCC Under-Voltage Lockout | Hysteresis VCC voltage | 450 | 650 | mV | |
ENABLE (EN), MODE | ||||||
VEN_R | EN Threshold High-level | VEN rising | 1.31 | 1.5 | V | |
VEN_F | EN Threshold Low-level | VEN falling | 1.0 | 1.13 | V | |
VEN_H | EN Threshold Low-level | Hysteresis | 180 | mV | ||
IEN | EN Pull down Current | VEN = 0.8 V | 1.3 | 2.3 | uA | |
VIL;MODE | Low-Level Input Voltage at MODE Pin | 0.4 | V | |||
VIH;MODE | High-Level Input Voltage at MODE Pin | 0.8 | V | |||
IMODE | MODE Pull down Current | VMODE = 0.8 V | 1.3 | 2.3 | 3.5 | uA |
VCC | ||||||
VVCC | VCC Output Voltage | VVIN > 5.2 V, IVCC ≤ 1 mA | 4.85 | 5 | 5.15 | V |
OUTPUT VOLTAGE (VOUT) | ||||||
VVOUT | VOUT voltage (TPS51384) | TJ=25°C | 1.802 | 1.82 | 1.838 | V |
VOUT Voltage (TPS51384) | -40 °C ≤ TJ ≤125°C | 1.793 | 1.82 | 1.847 | V | |
VVOUT | VOUT Voltage (TPS51383) | TJ=25°C | 3.326 | 3.36 | 3.394 | V |
VOUT Voltage (TPS51383) | -40 °C ≤ TJ ≤125°C | 3.30 | 3.36 | 3.42 | V | |
DUTY CYCLE and FREQUENCY CONTROL | ||||||
fSW | Switching frequency | CCM operation | 480 | 600 | 720 | kHz |
tON(min) | Minimum ON pulse width | TJ = 25°C | 65 | 75 | ns | |
tOFF(min) | Minimum OFF pulse width | TJ = 25°C | 190 | ns | ||
tOOA | OOA operation period | VMODE = VVCC | 30 | 50 | μs | |
SOFT-START | ||||||
tSS | Internal fixed softstart | 0.55 | 1 | 1.35 | ms | |
POWER SWITCHES (SW) | ||||||
RDSON(HS) | High-side MOSFET on-resistance | TJ = 25°C | 22 | mΩ | ||
RDSON(LS) | Low-side MOSFET on-resistance | TJ = 25°C | 11 | mΩ | ||
BOOT CIRCUIT | ||||||
CURRENT LIMIT | ||||||
IOCL | Low-side valley current limit | Valley current limit on LS FET | 9.5 | 11 | 12.5 | A |
INOCL | Low-side negative current limit | Sinking current limit on LS FET | 3.9 | A | ||
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | ||||||
VOVP | OVP Trip Threshold | 117 | 120 | 123 | % | |
tOVPDLY | OVP Prop deglitch | 20 | μs | |||
tOVPDLY | OVP latch-off Prop deglitch | 256 | μs | |||
VUVP | UVP Trip Threshold | 55 | 60 | 65 | % | |
tUVPDLY | UVP Prop deglitch | 256 | μs | |||
POWER GOOD (PG) | ||||||
tPGDLY | PG Start-Up delay | PG from low to high | 500 | μs | ||
tPGDLY | PG delay time when VFB rising (fault) | PG from high to low | 20 | μs | ||
tPGDLY | PG delay time when VFB falling (fault) | PG from high to low | 28 | μs | ||
VPGTH | PG Threshold when VFB falling (fault) | VFB falling (fault), percentage of VFB | 79 | 85 | 89 | % |
VPGTH | PG Threshold when VFB rising (good) | VFB rising (good), percentage of VFB | 86 | 90 | 94 | % |
VPGTH | PG Threshold when VFB rising (fault) | VFB rising (fault), percentage of VFB | 116 | 120 | 124 | % |
VPGTH | PG Threshold when VFB falling (good) | VFB falling (good), percentage of VFB | 109 | 115 | 119 | % |
IPGMAX | PG Sink Current | VPG = 0.5 V | 50 | mA | ||
IPGLK | PG Leak Current | VPG = 5.5 V | 1 | μA | ||
OUTPUT DISCHARGE | ||||||
RDIS | Discharge resistance | TJ = 25°C, VEN = 0 V | 160 | Ω | ||
SWITCH-OVER LDO OUTPUT (LDO) | ||||||
VLDO | LDO output voltage (TPS51383) | VEN = 0 V, VIN ≥ 4.5 V | 3.24 | 3.3 | 3.36 | V |
VLDO | LDO output voltage (TPS51384) | VEN = 0 V, VIN ≥ 4.5 V | 1.773 | 1.8 | 1.827 | V |
VLOADREG | LDO load regulation | VEN = 0 V, ILDO = 80 mA, VIN ≥ 5.2 V | -0.5 | 0.5 | % | |
ILDO | LDO current limit | VEN = 0 V, VIN ≥ 5.2 V | 100 | 170 | 240 | mA |
RLDOSW | VOUT switch-over FET on resistance (TPS51383) | VVIN ≥ 5.2 V, VEN = 3.3 V, VOUT = 3.3 V, ILDO = 50 mA | 0.8 | 2.1 | Ω | |
RLDOSW | VOUT switch-over FET on resistance (TPS51384) | VVIN ≥ 5.2 V, VEN = 3.3 V, VOUT = 1.8 V, ILDO = 50 mA | 0.5 | 1 | Ω | |
RLDOSW | VOUT switch-over FET on resistance (TPS51383) | VVIN = 4.5 V, VEN = 3.3 V, VOUT = 3.3 V, ILDO = 50 mA | 1.7 | 2.65 | Ω | |
RLDOSW | VOUT switch-over FET on resistance (TPS51384) | VVIN = 4.5 V, VEN = 3.3 V, VOUT = 1.8 V, ILDO = 50 mA | 0.6 | 1.3 | Ω | |
VBYPON | VOUT switch-over turn on voltage | VEN = 3.3 V | 98 | % | ||
VBYPOFF | VOUT switch-over turn off voltage | VEN = 3.3 V | 96 | % | ||
THERMAL SHUTDOWN | ||||||
TJ(SD) | Thermal shutdown threshold | 165 | °C | |||
TJ(HYS) | Thermal shutdown hysteresis (1) | 20 | °C |