JAJSC06C SEPTEMBER 2013 – June 2018 TPS53513
PRODUCTION DATA.
The TPS53513 device has cycle-by-cycle overcurrent limiting control. The inductor current is monitored during the OFF state and the controller maintains the OFF state during the period that the inductor current is larger than the overcurrent trip level. To provide good accuracy and a cost-effective solution, the TPS53513 device supports temperature compensated MOSFET RDS(on) sensing. Connect the TRIP pin to GND through the trip-voltage setting resistor, RTRIP. The TRIP pin sources ITRIP current, which is 10 μA typically at room temperature, and the trip level is set to the OCL trip voltage VTRIP as shown in Equation 4.
where
The inductor current is monitored by the voltage between the GND pin and SW pin so that the SW pin is properly connected to the drain pin of the low-side MOSFET. ITRIP has a 3000-ppm/°C temperature slope to compensate the temperature dependency of RDS(on). The GND pin acts as the positive current-sensing node. Connect the GND pin to the proper current sensing device, (for example, the source pin of the low-side MOSFET.)
Because the comparison occurs during the OFF state, VTRIP sets the valley level of the inductor current. Thus, the load current at the overcurrent threshold, IOCP, is calculated as shown in Equation 5.
where
Equation 5 calculates the typical DC OCP level (typical low-side on-resistance [RDS(on)] of 5.9 mΩ should be used); to design for worst case minimum OCP, maximum low-side on-resistance value of 8 mΩ should be used.
During an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output voltage tends to decrease. Eventually, the output voltage crosses the undervoltage-protection threshold and shuts down.
For the TPS53513 device, the overcurrent protection maximum is recommended up to 12 A only.