JAJS298D DECEMBER   2003  – June 2019 TPS54110

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
  4. 4 改訂履歴
  5. 5 Device Information
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Recommended Operating Conditions
    3. 7.3 Thermal Information
    4. 7.4 Electrical Characteristics
    5. 7.5 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VBIAS Regulator (VBIAS)
      2. 8.3.2 Voltage Reference
      3. 8.3.3 Oscillator and PWM Ramp
      4. 8.3.4 Error Amplifier
      5. 8.3.5 PWM Control
      6. 8.3.6 Dead-Time Control and MOSFET Drivers
      7. 8.3.7 Overcurrent Protection
      8. 8.3.8 Thermal Shutdown
      9. 8.3.9 Power Good (PWRDG)
    4. 8.4 Undervoltage Lockout (UVLO)
    5. 8.5 Slow-Start/Enable (SS/ENA)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical TPS54110 Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Switching Frequency
          2. 9.2.1.2.2 Input Capacitors
          3. 9.2.1.2.3 Output Filter Components
            1. 9.2.1.2.3.1 Inductor Selection
            2. 9.2.1.2.3.2 Capacitor Selection
          4. 9.2.1.2.4 Compensation Components
          5. 9.2.1.2.5 Bias and Bootstrap Capacitors
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Very-Small Form-Factor Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Two-Output Sequenced-Startup Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Layout Considerations For Thermal Performance
    4. 10.4 Grounding and Powerpad Layout
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • PWP|20
サーマルパッド・メカニカル・データ
発注情報

8.3.6 Dead-Time Control and MOSFET Drivers

Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs during the switching transitions by actively controlling the turn-on times of the MOSFET drivers. The high-side driver does not turn on until the gate-drive voltage to the low-side FET is below 2 V. The low-side driver does not turn on until the voltage at the gate of the high-side MOSFETs is below 2 V. The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side driver is supplied from the BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5-Ω bootstrap switch connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and reduces external-component count.