JAJS289F December   2001  – April 2019 TPS54310

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Dissipation Ratings
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Undervoltage Lockout (UVLO)
      2. 8.3.2  Slow Start and Enable (SS/ENA)
      3. 8.3.3  VBIAS Regulator (VBIAS)
      4. 8.3.4  Voltage Reference
      5. 8.3.5  Oscillator and PWM Ramp
      6. 8.3.6  Error Amplifier
      7. 8.3.7  PWM Control
      8. 8.3.8  Dead-Time Control and MOSFET Drivers
      9. 8.3.9  Overcurrent Protection
      10. 8.3.10 Thermal Shutdown
      11. 8.3.11 Powergood (PWRGD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Continuous Conduction Mode
      2. 8.4.2 Switching Frequency Configuration
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Voltage
        2. 9.2.2.2 Feedback Circuit
        3. 9.2.2.3 Setting the Output Voltage
        4. 9.2.2.4 Operating Frequency
        5. 9.2.2.5 Output Filter
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 関連する DC/DC 製品
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Electrical Characteristics

TJ = –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE, VIN
VIN input voltage range 3 6 V
Quiescent current fs = 350 kHz, SYNC = 0.8 V, RT open 6.2 9.6 mA
fs = 550 kHz, SYNC ≥ 2.5 V, RT open, phase pin open 8.4 12.8
Shutdown, SS/ENA = 0 V 1 1.4
UNDERVOLTAGE LOCK OUT
Start threshold voltage, UVLO 2.95 3 V
Stop threshold voltage, UVLO 2.70 2.80
Hysteresis voltage, UVLO 0.14 0.16 V
Rising and falling edge deglitch, UVLO(1) 2.5 µs
BIAS VOLTAGE
VO Output voltage, VBIAS I(VBIAS) = 0 2.70 2.80 2.90 V
Output current, VBIAS(2) 100 µA
CUMULATIVE REFERENCE
Vref Accuracy 0.882 0.891 0.900 V
REGULATION
Line regulation(1)(3) IL = 1.5 A, fs = 350 kHz, TJ = 85°C 0.07 %/V
IL = 1.5 A, fs = 550 kHz, TJ = 85°C 0.07
Load regulation(1)(3) IL = 0 A to 3 A, fs = 350 kHz, TJ = 85°C 0.03 %/A
IL = 0 A to 3 A, fs = 550 kHz, TJ = 85°C 0.03
OSCILLATOR
Internally set free-running frequency range SYNC ≤ 0.8 V, RT open 280 350 420 kHz
SYNC ≥ 2.5 V, RT open 440 550 660
Externally set free-running frequency range RT = 180 kΩ (1% resistor to AGND)(1) 252 280 308 kHz
RT = 100 kΩ (1% resistor to AGND) 460 500 540
RT = 68 kΩ (1% resistor to AGND)(1) 663 700 762
High-level threshold voltage, SYNC 2.5 V
Low-level threshold voltage, SYNC 0.8 V
Pulse duration, SYNC(1) 50
Frequency range, SYNC(1) 330 700 kHz
Ramp valley(1) 0.75 V
Ramp amplitude (peak-to-peak)(1) 1 V
Minimum controllable on time(1) 200 ns
Maximum duty cycle 90%
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1 kΩ COMP to AGND(1) 90 110 dB
Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND(1) 3 5 MHz
Error amplifier common-mode input voltage range Powered by internal LDO(1) 0 VBIAS V
IIB Input bias current, VSENSE VSENSE = Vref 60 250 nA
VO Output voltage slew rate (symmetric), COMP 1 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM comparator input to PH pin (excluding dead time) 10 mV overdrive(1) 70 85 ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA(1) 0.03 V
Falling edge deglitch, SS/ENA(1) 2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 2.7 V 1.5 2.3 4 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %Vref
Power good hysteresis voltage(4) 3 %Vref
Power good falling edge deglitch(4) 35 µs
Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.30 V
Leakage current, PWRGD VI = 5.5 V 1 µA
CURRENT LIMIT
Current limit trip point VI = 3 V, output shorted(4) 4 6.5 A
VI = 6 V, output shorted(4) 4.5 7.5
Current limit leading edge blanking time(4) 100 ns
Current limit total response time(4) 200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point(4) 135 150 165 °C
Thermal shutdown hysteresis(4) 10 °C
OUTPUT POWER MOSFETS
rDS(on) Power MOSFET switches IO = 3 A, VI = 6 V(4) 59 88 mΩ
IO = 3 A, VI = 3 V(4) 85 136
(1) Specified by the circuit used in Figure 10.
(2) Static resistive loads only
(3) Specified by design
(4) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design.