JAJSBF8B June   2011  – April 2018 TPS54478

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     効率
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency PWM Control
      2. 7.3.2  Slope Compensation and Output Current
      3. 7.3.3  Bootstrap Voltage (BOOT) and Low Dropout Operation
      4. 7.3.4  Error Amplifier
      5. 7.3.5  Voltage Reference
      6. 7.3.6  Adjusting the Output Voltage
      7. 7.3.7  Enable and Adjusting Undervoltage Lockout
      8. 7.3.8  Slow Start / Tracking Pin
      9. 7.3.9  Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
      10. 7.3.10 Overcurrent Protection
      11. 7.3.11 START-UP into Prebiased Output
      12. 7.3.12 Synchronize Using the RT/CLK Pin
      13. 7.3.13 Power Good (PWRGD Pin)
      14. 7.3.14 Overvoltage Transient Protection
      15. 7.3.15 Thermal Shutdown
      16. 7.3.16 Small Signal Model for Loop Response
      17. 7.3.17 Simple Small Signal Model for Peak Current Mode Control
      18. 7.3.18 Small Signal Model for Frequency Compensation
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Operation
      2. 7.4.2 Standby Operation
    5. 7.5 Programming
      1. 7.5.1 Sequencing
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting the Switching Frequency
        2. 8.2.2.2 Output Inductor Selection
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Input Capacitor
        5. 8.2.2.5 Slow Start Capacitor
        6. 8.2.2.6 Bootstrap Capacitor Selection
        7. 8.2.2.7 Output Voltage and Feedback Resistors Selection
        8. 8.2.2.8 Compensation
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation Estimate
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
      2. 11.1.2 WEBENCH®ツールによるカスタム設計
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Output Voltage and Feedback Resistors Selection

For the example design, 10.0 kΩ was selected for R7. Using Equation 30, R6 is calculated as 20.0 kΩ. The nearest standard 1% resistor is 20.0 kΩ.

Equation 30. TPS54478 R6_lvsas2.gif

Due to the internal design of the TPS54478, there is a minimum output voltage limit for any given input voltage. The output voltage can never be lower than the internal voltage reference of 0.6 V. Above 0.6 V, the output voltage may be limited by the minimum controllable on time. The minimum output voltage in this case is given by Equation 31:

Equation 31. TPS54478 eq_voutmin_lvsae9.gif

where

  • Voutmin = minimum achievable output voltage
  • Ontimemin = minimum controllable on-time (100 ns typical. 120 ns no load)
  • Fsmax = maximum switching frequency including tolerance
  • Vinmax = maximum input voltage
  • Ioutmin = minimum load current
  • RDSmin = minimum high-side MOSFET on resistance (see Electrical Characteristics)
  • RL = series resistance of output inductor

There is also a maximum achievable output voltage which is limited by the minimum off time. The maximum output voltage is given by Equation 32:

Equation 32. TPS54478 eq_voutmax_lvsae9.gif

where

  • Voutmax = maximum achievable output voltage
  • Vin = minimum input voltage
  • Offtimemax = maximum off time (180 ns typical for adequate margin)
  • ts = 1/Fs
  • Ioutmax = maximum current
  • RDSmax = maximum high-side MOSFET on resistance (see Electrical Characteristics)
  • RI = DCR of the inductor
  • tdead = dead time (40 ns)