JAJSIO3 データシート

JAJSIO3A February 2020 – September 2020 TPS546B24A

PRODUCTION DATA

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6.6 Typical Characteristics

V_PIN = V_AVIN = 12 V, T_A = 25°C, f_sw = 650 kHz (unless otherwise specified). Safe operating area curves were measured using a Texas Instruments evaluation module (EVM).

V_IN = 12 V	V_OUT = 1 V	Snubber = 1 nF + 1Ω
f_SW = 650 kHz	L = 300 nH	R_BOOT = 0 Ω

Figure 6-1 TPS546B24A Safe Operating Area

V_IN = 5 V	L = 300 nH	Snubber = 1 nF + 1 Ω
f_SW = 1100 kHz	R_DCR = 0.23 mΩ	R_BOOT = 0 Ω

Figure 6-3 TPS546B24A Efficiency vs Output Current

V_IN = 12 V	L = 300 nH	Snubber = 1 nF + 1 Ω
f_SW = 1100 kHz	R_DCR = 0.23 mΩ	R_BOOT = 0 Ω

Figure 6-5 TPS546B24A Efficiency vs Output Current

Figure 6-7 High-Side MOSFET On-Resistance (R_DS(on)) vs Junction Temperature

Figure 6-9 Switching Frequency vs Junction Temperature

I_VDD5 = 10 mA

V_PVIN = V_AVIN = 12 V

Figure 6-11 VDD5 Voltage vs Junction Temperature

VIN_ON = 2.75 V

Figure 6-13 Turnon Voltage vs Junction Temperature

Figure 6-15 EN/UVLO Thresholds vs Junction Temperature

V_IN = 5 V	L = 300 nH	Snubber = 1 nF + 1 Ω
f_SW = 650 kHz	R_DCR = 0.23 mΩ	R_BOOT = 0 Ω

Figure 6-2 TPS546B24A Efficiency vs Output Current

V_IN = 12 V	L = 300 nH	Snubber = 1 nF + 1 Ω
f_SW = 650 kHz	R_DCR = 0.23 mΩ	R_BOOT = 0 Ω

Figure 6-4 TPS546B24A Efficiency vs Output Current

Figure 6-6 Low-Side MOSFET On-Resistance (R_DS(on)) vs Junction Temperature

VOUT_COMMAND = 1 V

Figure 6-8 Output Voltage vs Junction Temperature

Figure 6-10 Non-Switching Input Current (I_AVIN)
vs Junction Temperature

I_BP1V5 = 2 mA

V_PVIN = V_AVIN = 12 V

Figure 6-12 BP1V5 Voltage vs Junction Temperature

VIN_OFF = 2.5 V

Figure 6-14 Turnoff Voltage vs Junction Temperature

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発注情報

6.6 Typical Characteristics