SLUSEE2 October   2020 TPS562207S

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adaptive On-Time Control and PWM Operation
      2. 8.3.2 Soft Start and Pre-Biased Soft Start
      3. 8.3.3 Current Protection
      4. 8.3.4 Undervoltage Lockout (UVLO) Protection
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Standby Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Resistors Selection
        2. 9.2.2.2 Output Filter Selection
        3. 9.2.2.3 Input Capacitor Selection
        4. 9.2.2.4 Bootstrap Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.5 Electrical Characteristics

TJ = –40°C to 125°C, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IVIN Operating – non-switching supply current VIN current, EN = 5 V, VFB = 1 V 590 750 µA
IVINSDN Shutdown supply current VIN current, EN = 0 V 1 3 µA
LOGIC THRESHOLD
VENH EN high-level input voltage EN 1.35 1.6 V
VENL EN low-level input voltage EN 0.8 1.05 V
REN EN pin resistance to GND VEN = 12 V 225 400 900 kΩ
VFB VOLTAGE AND DISCHARGE RESISTANCE
VFBTH VFB threshold voltage TA = 25°C 792 804 816 mV
IFB VFB input current VFB = 1 V 0 ±0.1 µA
MOSFET
RDS(on)h High-side switch resistance TA = 25°C, VBST – SW = 5.5 V 140 mΩ
RDS(on)l Low-side switch resistance TA = 25°C 84 mΩ
CURRENT LIMIT
Iocl_l_source Low side FET source current limit 2.24 3.1 4 A
INocl_l_sink Low side FET sink current limit 1.1 A
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold(1) Shutdown temperature 160 °C
Hysteresis 25
ON-TIME TIMER CONTROL
tOFF(MIN) Minimum off time VFB = 0.5 V 220 310 ns
SOFT START
Tss Soft-start time Internal soft-start time, Test Vout from 10% to 90% 1.2 ms
FREQUENCY
Fsw Switching frequency VO = 1.05 V 580 kHz
OUTPUT UNDERVOLTAGE
VUVP Output UVP threshold Hiccup detect (H > L) 65%
THICCUP_WAIT Hiccup on time 2.2 ms
THICCUP_RE Hiccup time before restart 18 ms
UVLO
UVLO UVLO threshold Wake up VIN voltage 4.0 4.3 V
Shutdown VIN voltage 3.3 3.6
Hysteresis VIN voltage 0.4
(1) Not production tested.