JAJSOS6 November   2023 TPS568236

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  PWM Operation and D-CAP3 Control Mode
      2. 6.3.2  VCC LDO
      3. 6.3.3  Soft Start
      4. 6.3.4  Enable Control
      5. 6.3.5  Power Good
      6. 6.3.6  Overcurrent Protection and Undervoltage Protection
      7. 6.3.7  UVLO Protection
      8. 6.3.8  Overvoltage Protection
      9. 6.3.9  Output Voltage Discharge
      10. 6.3.10 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 MODE Pin
      2. 6.4.2 Forced Continuous Conduction Operation
      3. 6.4.3 Power Save Mode (PSM)
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 External Component Selection
          1. 7.2.2.1.1 Inductor Selection
          2. 7.2.2.1.2 Output Capacitor Selection
          3. 7.2.2.1.3 Input Capacitor Selection
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

MODE connected to AGND, VEN = 3.3V; TJ = –40°C to +125°C, Typical values are at TJ = 25°C and VVIN = 12 V (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT SUPPLY (VIN)
VINInput voltage rangeVIN4.518V
IVIN VIN supply current (Quiescent) No load, VEN = 3.3 V, non-switching 84 µA
IINSDN VIN shutdown current No load, VEN = 0 V, PG open 3.7 µA
UVLO
VVCC UVLO_RVCC undervoltage lockoutVVCC rising4.24.42V
VVCC UVLO_FVCC undervoltage lockoutVVCC falling3.653.85V
VVCC UVLO_HVCC undervoltage lockoutHysteresis VCC voltage350650mV
ENABLE (EN), MODE
VEN_REN threshold high-levelVEN rising1.311.5V
VEN_FEN threshold low-levelVEN falling1.01.13V
VEN_HEN threshold low-levelHysteresis180mV
IENEN pulldown currentVEN = 0.8 V1.32.3uA
VIL;MODE Low-level input voltage at MODE Pin 0.4V
VIH;MODE High-level input voltage at MODE Pin 0.8V
IMODEMODE pulldown currentVMODE = 0.8 V1.32.33.5uA
VCC
VVCC VCC output voltageVVIN > 5.2 V, IVCC ≤ 1 mA4.8555.15V
FEEDBACK VOLTAGE (FB)
VFB_REG Feedback regulation voltage TJ = 25°C 594 600 606 mV
Feedback regulation voltage –40°C ≤ T≤ 125°C 591 600 609 mV
DUTY CYCLE and FREQUENCY CONTROL
fSW Switching frequency CCM operation 600 kHz
tON(min)Minimum ON pulse widthTJ = 25°C6575ns
tOFF(min)Minimum OFF pulse widthTJ = 25°C190ns
SOFT-START
tSS Internal fixed soft start 0.55 1 1.35 ms
ISS Soft Start charge current 4 5 6 μA
POWER SWITCHES (SW)
RDSON(HS)High-side MOSFET on-resistanceTJ = 25°C22
RDSON(LS)Low-side MOSFET on-resistanceTJ = 25°C11
CURRENT LIMIT
IOCL Low-side valley current limit Valley current limit on LS FET 9.5 11 12.5 A
INOCLLow-side negative current limitSinking current limit on LS FET3.9A
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VOVPOVP trip threshold117120123%
tOVPDLYOVP prop deglitch20μs
tOVPDLY OVP latch-off prop deglitch 256 μs
VUVPUVP trip threshold556065%
tUVPDLYUVP prop deglitch256μs
POWER GOOD (PG)
tPGDLYPG start-up delayPG from low to high500μs
tPGDLYPG delay time when VFB rising (fault)PG from high to low20μs
tPGDLYPG delay time when VFB falling (fault)PG from high to low28μs
VPGTHPG threshold when VFB falling (fault)VFB falling (fault), percentage of VFB 798589%
VPGTHPG threshold when VFB rising (good)VFB rising (good), percentage of VFB 869094%
VPGTHPG threshold when VFB rising (fault)VFB rising (fault), percentage of VFB 116120124%
VPGTHPG threshold when VFB falling (good)VFB falling (good), percentage of VFB 109115119%
IPGMAXPG sink currentVPG = 0.5 V50mA
IPGLKPG leak currentVPG = 5.5 V1μA
OUTPUT DISCHARGE
RDIS Discharge resistance T= 25 °C, VEN = 0 V 160 Ω
THERMAL SHUTDOWN
TJ(SD)Thermal shutdown threshold165°C
TJ(HYS)Thermal shutdown hysteresis (1)20°C
These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.