SLVS274A March   2000  – April 2016 TPS60200 , TPS60201 , TPS60202 , TPS60203

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Tables
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Electrical Characteristics - Low-Battery Comparator
    7. 7.7 Electrical Characteristics - Power-Good Comparator
    8. 7.8 Typical Characteristic
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Start-Up, Shutdown, and Auto-Discharge
      2. 8.3.2 Synchronization to an External Clock Signal
      3. 8.3.3 Power-Good Detector
    4. 8.4 Device Functional Modes
      1. 8.4.1 Push-Pull Operating Mode
      2. 8.4.2 Constant-Frequency Mode
      3. 8.4.3 Pulse-Skip Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Capacitor Selection
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Low-Battery Detector (TPS60200 and TPS60202)
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage IN, OUT, EN, LBI, LBO, PG to GND –0.3 3.6 V
C1+, C2+ to GND –0.3 VO + 0.3
C1–, C2– to GND –0.3 VI + 0.3
Continuous total power dissipation TA ≤ 25°C power rating 424 mW
TA = 70°C power rating 187
TA = 85°C power rating 136
Continuous output current TPS60200, TPS60201 150 mA
TPS60202, TPS60203 75
Junction temperature, TJ 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VI Input voltage 1.6 3.6 V
Ci Input capacitor 2.2 µF
C1, C2 Flying capacitors 1 µF
CO Output capacitor 2.2 µF
TJ Operating junction temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS6020x UNIT
DGS (MSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 158.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 49.3 °C/W
RθJB Junction-to-board thermal resistance 78.1 °C/W
ψJT Junction-to-top characterization parameter 4.7 °C/W
ψJB Junction-to-board characterization parameter 76.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Ci = 2.2 µF, C1 = C2 = 1 µF, CO = 2.2 µF, TA = –40°C to 85°C, VI = 2.4 V, and EN = VI (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IO(MAX) Maximum continuous output current TPS60200 and TPS60201, VI = 2 V 100 mA
TPS60202 and TPS60203, VI = 2 V 50
VO Output voltage 1.6 V < VI < 1.8 V,
0 < IO < 0.25 × IO(MAX)		 3 V
1.8 V < VI < 2 V,
0 < IO < 0.5 × IO(MAX)		 3.17 3.43
2 V < VI < 3.3 V, 0 < IO < IO(MAX) 3.17 3.43
3.3 V < VI < 3.6 V, 0 < IO < IO(MAX) 3.17 3.47
VPP Output voltage ripple IO = IO(MAX) 5 mVPP
I(Q) Quiescent current (no-load input current) IO = 0 mA, VI = 1.8 V to 3.6 V 35 70 µA
I(SD) Shutdown supply current EN = 0 V 0.05 1 µA
f(OSC) Internal switching frequency 200 300 400 kHz
f(SYNC) External clock signal frequency 400 600 800 kHz
External clock signal duty cycle 30% 70%
VIL EN input low voltage VI = 1.6 V to 3.6 V 0.3 × VI V
VIH EN input leakage current VI = 1.6 V to 3.6 V 0.7 × VI V
Ilkg(EN) EN input leakage current EN = 0 V or VI 0.01 0.1 µA
Output capacitor auto discharge time EN is set from VI to GND,
time until VO < 0.5 V		 0.6 ms
Output resistance in shutdown EN = 0 V 70 Ω
LinSkip threshold VI = 2.2 V 7 mA
Output load regulation 10 mA < IO< IO(MAX), TA = 25°C 0.01% mA
Output line regulation 2 V < VI < 3.3 V,
IO = 0.5 × IO(MAX), TA = 25°C		 0.6% V
I(SC) Short-circuit current VI = 2.4 V, VO = 0 V 60 mA

7.6 Electrical Characteristics – Low-Battery Comparator

TPS60200 and TPS60202 devices only at TA = –40°C to 85°C, VI = 2.4 V, and EN = VI (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(LBI) LBI trip voltage VI = 1.6 V to 2.2 V,
TC = 0°C to 70°C		 1.13 1.18 1.23 V
LBI trip voltage hysteresis For rising voltage at LBI 10 mV
II(LBI) LBI input current V(LBI) = 1.3 V 2 50 nA
VO(LBO) LBO output voltage low V(LBI) = 0 V, I(LBO) = 1 mA 0.4 V
Ilkg(LBO) LBO leakage current V(LBI) = 1.3 V, V(LBO) = 3.3 V 0.01 0.1 µA
(1) During start-up of the converter, the LBO output signal is invalid for the first 500 µs.

7.7 Electrical Characteristics – Power-Good Comparator

TPS60201 and TPS60203 devices only at TA = –40°C to 85°C, VI = 2.4 V, and EN = VI (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(PG) Power-good trip voltage TC = 0°C to 70°C 0.87 × VO 0.91 × VO 0.95 × VO V
Vhys(PG) Power-good trip voltage hysteresis VO decreasing, TC = 0°C to 70°C 1%
VO(PG) Power-good output voltage low VO = 0 V, I(PG) = 1 mA 0.4 V
Ilkg(PG) Power-good leakage current VO = 3.3 V, V(PG) = 3.3 V 0.01 0.1 µA
(1) During start-up of the converter, the PG output signal is invalid for the first 500 µs.

7.8 Typical Characteristic

TPS60200 TPS60201 TPS60202 TPS60203 graph_05_slvs274.gif Figure 1. Quiescent Supply Current vs Input Voltage