SLVS538B NOVEMBER   2004  – December 2014 TPS61060 , TPS61061 , TPS61062

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Start-Up
      2. 8.3.2 Short-Circuit Protection
      3. 8.3.3 Overvoltage Protection (OVP)
      4. 8.3.4 Efficiency and Feedback Voltage
      5. 8.3.5 Undervoltage Lockout
      6. 8.3.6 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Enable PWM Dimming
      2. 8.4.2 Digital Brightness Control (ILED)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Efficiency
        3. 9.2.2.3 Output Capacitor Selection
        4. 9.2.2.4 Input Capacitor Selection
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Chipscale Package Dimensions

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YZF|8
  • DRB|8
サーマルパッド・メカニカル・データ

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN(2) Supply voltages on pin –0.3 7 V
EN, ILED, FB(2) Voltages on pins –0.3 7 V
OUT(2) Voltage on pin 33 V
SW(2) Voltage on pin 33 V
Operating junction temperature –40 150 °C
Lead temperature (soldering, 10 s) 260 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN TYP MAX UNIT
VI Input voltage range 2.7 6.0 V
L Inductor(1) 22 µH
CI Input capacitor(1) 1 µF
CO Output capacitor(1) 0.22 1 µF
TA Operating ambient temperature -40 85 °C
TJ Operating junction temperature -40 125 °C
(1) Refer to application section for further information.

7.4 Thermal Information

THERMAL METRIC(1) TPS6106x UNIT
DRB YZF
8 PINS
RθJA Junction-to-ambient thermal resistance 47.6 120.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.1 0.7
RθJB Junction-to-board thermal resistance 23.2 59.4
ψJT Junction-to-top characterization parameter 1.0 2.2
ψJB Junction-to-board characterization parameter 23.4 59.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.1 n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Vin = 3.6 V, EN = VIN, TA= –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.7 6 V
IQ Operating quiescent current into Vin Device not switching 1 mA
ISD Shutdown current EN = GND 1 10 µA
VUVLO Undervoltage lockout threshold VIN falling 1.65 1.8 V
VHYS Undervoltage lockout hysteresis 50 mV
ENABLE AND ILED
VEN Enable high-level voltage VIN = 2.7 V to 6 V 1.2 V
VEN Enable low-level voltage VIN = 2.7 V to 6 V 0.4 V
REN Enable pulldown resistor 200 300 kΩ
tshtdn Enable-to-shutdown delay (1) EN = high to low 50 ms
tPWML PWM low-level signal time (1) PWM signal applied to EN 25 ms
VILED ILED high-level voltage VIN = 2.7 V to 6 V 1.2 V
VILED ILED low-level voltage VIN = 2.7 V to 6 V 0.4 V
IILED ILED input leakage current ILED = GND or VIN 0.1 3 µA
DAC resolution 5 Bit 15.6 mV
tup Increase feedback voltage one step ILED = high to low 1 75 µs
tdown Decrease feedback voltage one step ILED = high to low 180 300 µs
tdelay Delay time between up/down steps ILED = low to high 1.5 µs
toff Digital programming off, VFB = 500 mV ILED = high to low 720 µs
FEEDBACK FB
IFB Feedback input bias current VFB = 500 mV 1 1.5 µA
VFB Feedback regulation voltage ILED = GND, after start-up 485 500 515 mV
VFB Feedback regulation voltage ILED = High, after start-up 240 250 260 mV
POWER SWITCH SYNCHRONOUS RECTIFIER AND CURRENT LIMIT (SW)
rDS(ON) P-channel MOSFET on-resistance VO = 10 V, Isw = 10 mA 2.5 3.7 Ω
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V, Isw = 100 mA 0.6 0.9 Ω
N-channel MOSFET on-resistance VIN = VGS = 2.7 V, Isw = 100 mA 0.7 1.0 Ω
Iswleak Switch leakage current(2) VIN = VSW= 6 V, VOUT = GND,
EN = GND		 0.1 2 µA
ISW N-Channel MOSFET current limit VO = 10 V 325 400 475 mA
OSCILLATOR
fs Switching frequency 0.8 1.0 1.2 MHz
OUTPUT
Vovp Output overvoltage protection VO rising; TPS61060 14 14.5 16 V
Vovp Output overvoltage protection VO rising; TPS61061 18 18.5 19.8 V
Vovp Output overvoltage protection VO rising; TPS61062 22.2 23.5 25 V
Vovp Output overvoltage protection hysteresis TPS61060/61/62, VO falling 0.7 V
Vo Output voltage threshold for short-circuit detection VO falling VIN–0.7 V
Vo Output voltage threshold for short-circuit detection VO rising VIN–0.3 V
Ipre Precharge current and short-circuit current Start-up, EN = low to high,
OUT = GND		 mA
VIN = 6 V 180
VIN = 3.6 V 95
VIN = 2.7 V 65
D Maximum duty cycle 95%
(1) A PWM low signal applied to EN for a time (≥25 ms) could cause a device shutdown. After a period of ≥50 ms the device definitely enters shutdown mode.
(2) The switch leakage current includes the leakage current of both internal switches, which is the leakage current from SW to ground, and from SW to VOUT, with VIN = VSW.

7.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
Efficiency (η) vs LED current; 2 LEDs, ILED = high Figure 1
vs LED current; 3 LEDs, ILED = low Figure 2
vs LED current; 3 LEDs, ILED = high Figure 3
vs LED current; 4 LEDs, ILED = low Figure 4
vs LED current; 4 LEDs, ILED = high Figure 5
vs LED current; 5 LEDs, ILED = high Figure 6
Digital brightness control Feedback voltage vs ILED programming step Figure 7
LED current vs PWM duty cycle Figure 8
tc_eff_2h_lvs538.gifFigure 1. Efficiency vs LED Current
tc_eff_3h_lvs538.gifFigure 3. Efficiency vs LED Current
tc_eff_3l_lvs538.gifFigure 2. Efficiency vs LED Current
tc_eff_4l_lvs538.gifFigure 4. Efficiency vs LED Current
tc_eff_4h_lvs538.gifFigure 5. Efficiency vs LED Current
tc_vfp_prg_lvs538.gif
Figure 7. Digital Brightness Control Feedback Voltage vs ILED Programming Step
tc_eff_5h_lvs538.gifFigure 6. Efficiency vs LED Current
tc_led_dc_lvs538.gifFigure 8. LED Current vs PWM Duty Cycle