JAJSGY7B September 2017 – February 2019 TPS61085A-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage | 2.3 | 6 | V | ||
IQ | Operating quiescent current into IN | Device not switching, VFB = 1.3 V | 70 | 100 | µA | |
ISDVIN | Shutdown current into IN | EN = GND | 1 | µA | ||
UVLO | Undervoltage lockout threshold | VIN falling | 2.2 | V | ||
VIN rising | 2.3 | |||||
TSD | Thermal shutdown | Temperature rising, TJ | 150 | °C | ||
TSD(HYS) | Thermal shutdown hysteresis | 14 | °C | |||
LOGIC SIGNALS EN, FREQ | ||||||
VIH | High level input voltage | VIN = 2.3 V to 6 V | 2 | V | ||
VIL | Low level input voltage | VIN = 2.3 V to 6 V | 0.5 | V | ||
Ilkg | Input leakage current | EN = FREQ = GND | 0.1 | µA | ||
BOOST CONVERTER | ||||||
VS | Boost output voltage | VIN + 0.5 | 18.5 | V | ||
VFB | Feedback regulation voltage | 1.230 | 1.238 | 1.246 | V | |
gm | Transconductance error amplifier | 107 | µA/V | |||
IFB | Feedback input bias current | VFB = 1.238 V | 0.1 | µA | ||
RDS(on) | N-channel MOSFET ON-resistance | VIN = VGS = 5 V, ISW = current limit | 0.13 | 0.2 | Ω | |
VIN = VGS = 3.3 V, ISW = current limit | 0.15 | 0.24 | ||||
Ilkg | SW leakage current | EN = GND, VSW = 6 V | 2 | µA | ||
ILIM | N-channel MOSFET current limit | 2 | 2.6 | 3.2 | A | |
ISS | Soft-start current | VSS = 1.238 V | 7 | 10 | 13 | µA |
fosc | Oscillator frequency | FREQ = high | 0.9 | 1.2 | 1.5 | MHz |
FREQ = low | 480 | 650 | 820 | kHz | ||
Line regulation | VIN = 2.3 V to 6 V, IOUT = 10 mA | 0.0002 | %/V | |||
Load regulation | VIN = 3.3 V, IOUT = 1 mA to 400 mA | 0.11 | %/A |