SUPPLY |
|
VIN |
Input voltage range |
|
2.3 |
|
6 |
V |
IQ |
Operating quiescent current into IN |
Device not switching, VFB = 1.3 V |
|
70 |
100 |
µA |
ISDVIN |
Shutdown current into IN |
EN = GND |
|
|
1 |
µA |
UVLO |
Undervoltage lockout threshold |
VIN falling |
|
|
2.2 |
V |
VIN rising |
|
|
2.3 |
TSD |
Thermal shutdown |
Temperature rising, TJ |
|
150 |
|
°C |
TSD(HYS) |
Thermal shutdown hysteresis |
|
|
14 |
|
°C |
LOGIC SIGNALS EN, FREQ |
|
VIH |
High level input voltage |
VIN = 2.3 V to 6 V |
2 |
|
|
V |
VIL |
Low level input voltage |
VIN = 2.3 V to 6 V |
|
|
0.5 |
V |
Ilkg |
Input leakage current |
EN = FREQ = GND |
|
|
0.1 |
µA |
BOOST CONVERTER |
|
VS |
Boost output voltage |
|
VIN + 0.5 |
|
18.5 |
V |
VFB |
Feedback regulation voltage |
|
1.230 |
1.238 |
1.246 |
V |
gm |
Transconductance error amplifier |
|
|
107 |
|
µA/V |
IFB |
Feedback input bias current |
VFB = 1.238 V Ω |
|
|
0.1 |
µA |
RDS(on) |
N-channel MOSFET ON-resistance |
VIN = VGS = 5 V, ISW = current limit |
|
0.13 |
0.2 |
Ω |
VIN = VGS = 3.3 V, ISW = current limit |
|
0.15 |
0.24 |
Ilkg |
SW leakage current |
EN = GND, VSW = 6 V |
|
|
2 |
µA |
ILIM |
N-Channel MOSFET current limit |
|
2 |
2.6 |
3.2 |
A |
ISS |
Soft-start current |
VSS = 1.238 V |
7 |
10 |
13 |
µA |
fosc |
Oscillator frequency |
FREQ = high |
0.9 |
1.2 |
1.5 |
MHz |
FREQ = low |
480 |
650 |
820 |
kHz |
|
Line regulation |
VIN = 2.3 V to 6 V, IOUT = 10 mA |
|
0.0002 |
|
%/V |
|
Load regulation |
VIN = 3.3 V, IOUT = 1 mA to 400 mA |
|
0.11 |
|
%/A |