SLVS676D JUNE 2006 – July 2015 TPS62420 , TPS62421
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input voltage on VIN(2) | –0.3 | 7 | V | ||
Voltage on EN, MODE/DATA, DEF_1 | –0.3 | VIN +0.3, ≤7 | V | ||
Maximum current into MODE/DATA | 500 | μA | |||
Voltage on SW1, SW2 | –0.3 | 7 | V | ||
Voltage on ADJ2, FB1 | –0.3 | VIN +0.3, ≤7 | V | ||
TJ(max) | Maximum junction temperature | 150 | °C | ||
TA | Operating ambient temperature | –40 | 85 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIN | Supply voltage | 2.5 | 6 | V | |
Output voltage range for adjustable voltage | 0.6 | VIN | V | ||
TA | Operating ambient temperature | –40 | 85 | °C | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS62420, TPS62421 | UNIT | |
---|---|---|---|
DRC (VSON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 45.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 64.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 20.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 20.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.8 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VIN | Input voltage range | 2.5 | 6 | V | |||
IQ | Operating quiescent current | One converter, IOUT = 0 mA. PFM mode enabled (Mode = 0) device not switching, EN1 = 1 or EN2 = 1 |
19 | 29 | μA | ||
Two converter, IOUT = 0 mA. PFM mode enabled (Mode = 0) device not switching, EN1 = 1 and EN2 = 1 |
32 | 48 | μA | ||||
IOUT = 0 mA, MODE/DATA = GND, for one converter, VOUT 1.575 V(1) | 23 | μA | |||||
IOUT = 0 mA, MODE/DATA = VIN, for one converter, VOUT 1.575 V(1) | 3.6 | mA | |||||
ISD | Shutdown current | EN1, EN2 = GND, VIN = 3.6 V(2) | 1.2 | 3 | μA | ||
EN1, EN2 = GND, VIN ramped from 0 V to 3.6 V(3) | 0.1 | 1 | |||||
VUVLO | Undervoltage lockout threshold | Falling | 1.5 | 2.35 | V | ||
Rising | 2.4 | ||||||
ENABLE EN1, EN2 | |||||||
VIH | High-level input voltage, EN1, EN2 | 1.2 | VIN | V | |||
VIL | Low-level input voltage, EN1, EN2 | 0 | 0.4 | V | |||
IIN | Input bias current, EN1, EN2 | EN1, EN2 = GND or VIN | 0.05 | 1.0 | μA | ||
DEF_1 INPUT | |||||||
VDEF_1H | DEF_1 high level input voltage | DEF_1 pin is a digital input at fixed output voltage options (TPS62421) | 0.9 | VIN | V | ||
VDEF_1L | DEF_1 low level input voltage | 0 | 0.4 | ||||
IIN | Input biasd current DEF_1 | DEF_1 = GND or VIN | 0.01 | 1 | μA | ||
MODE/DATA | |||||||
VIH | High-level input voltage, MODE/DATA | 1.2 | VIN | V | |||
VIL | Low-level input voltage, MODE/DATA | 0 | 0.4 | V | |||
IIN | Input bias current, MODE/DATA | MODE/DATA = GND or VIN | 0.01 | 1 | μA | ||
VOH | Acknowledge output voltage high | Open-drain, through external pullup resistor | VIN | V | |||
VOL | Acknowledge output voltage low | Open-drain, sink current 500 μA | 0 | 0.4 | V | ||
INTERFACE TIMING | |||||||
tStart | Start time | 2 | μs | ||||
tH_LB | High time low bit, logic 0 detection | Signal level on MODE/DATA pin is > 1.2 V | 2 | 200 | μs | ||
tL_LB | Low time low bit, logic 0 detection | Signal level on MODE/DATA pin < 0.4 V | 2x tH_LB | 400 | μs | ||
tL_HB | Low time high bit, logic 1 detection | Signal level on MODE/DATA pin < 0.4 V | 2 | 200 | μs | ||
tH_LB | High time high bit, logic 1 detection | Signal level on MODE/DATA pin is > 1.2 V | 2x tL_HS | 400 | μs | ||
TEOS | End of Stream | TEOS | 2 | μs | |||
tACKN | Duration of acknowledge condition (MODE/DATE line pulled low by the device) | VIN 2.5 V to 6 V | 400 | 520 | μs | ||
tvalACK | Acknowledge valid time | 2 | μs | ||||
ttimeout | Time-out for entering power-save mode | MODE/DATA pin changes from high to low | 520 | μs | |||
POWER SWITCH | |||||||
RDS(ON) | P-channel MOSFET on-resistance, converter 1, 2 | VIN = VGS = 3.6 V | 280 | 620 | mΩ | ||
ILK_PMOS | P-channel leakage current | VDS = 6 V | 1 | μA | |||
RDS(ON) | N-channel MOSFET on-resistance converter 1, 2 | VIN = VGS = 3.6 V | 200 | 450 | mΩ | ||
ILK_SW1/SW2 | Leakage current into SW1/SW2 pin | Includes N-Chanel leakage current, VIN = open, VSW = 6 V, EN = GND(4) |
6 | 7.5 | μA | ||
ILIMF | Forward current limit PMOS and NMOS | OUT1 600 mA | 2.5 V ≤ VIN ≤ 6 V | 0.85 | 1.0 | 1.15 | A |
OUT2 1000 mA | 1.19 | 1.4 | 1.61 | ||||
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | |||
Thermal shutdown hysteresis | Decreasing junction temperature | 20 | °C | ||||
OSCILLATOR | |||||||
fSW | Oscillator frequency | 2.5 V ≤ VIN ≤ 6 V | 2.0 | 2.25 | 2.5 | MHz | |
OUTPUT | |||||||
VOUT | Adjustable output voltage range | 0.6 | VIN | V | |||
Vref | Reference voltage | 600 | mV | ||||
VOUT (PFM) | DC output voltage accuracy PFM mode, adjustable and fixed output voltage(6) | Voltage positioning active, MODE/DATA = GND, device operating in PFM mode, VIN = 2.5 V to 5 V (5)(7) |
–1.5% | 1.01 × VOUT | 2.5% | ||
VOUT | MODE/DATA = GND; device operating in PWM mode VIN = 2.5 V to 6 V(7) | –1% | 0% | 1% | |||
VIN = 2.5 V to 6 V, Mode/Data = VIN , Fixed PWM operation, 0 mA < IOUT < IOUTMAX(8) | –1% | 0% | 1% | ||||
DC output voltage load regulation | PWM operation mode | 0.5 | %/A | ||||
tStart up | Start-up time | Activation time to start switching(9) | 170 | μs | |||
tRamp | VOUT Ramp UP time | Time to ramp from 5% to 95% of VOUT | 750 | μs |
PACKAGE | RθJA | POWER RATING FOR TA ≤ 25°C | DERATING FACTOR ABOVE TA = 25°C |
---|---|---|---|
DRC | 49°C/W | 2050 mW | 21 mW/°C |