JAJSFX8J August 2018 – March 2023 TPS62810-Q1 , TPS62811-Q1 , TPS62812-Q1 , TPS62813-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY | |||||||
IQ | Operating Quiescent Current | EN = high, IOUT= 0 mA, Device not switching, TJ= 125 °C |
21 | µA | |||
IQ | Operating Quiescent Current | EN = high, IOUT= 0 mA, Device not switching | 15 | 30 | µA | ||
ISD | Shutdown Current | EN = 0 V, at TJ = 125°C | 18 | µA | |||
ISD | Shutdown Current | EN = 0
V, Nominal value at TJ= 25°C, Max value at TJ= 150 °C |
1.5 | 26 | µA | ||
VUVLO | Undervoltage Lockout Threshold | Rising Input Voltage | 2.5 | 2.6 | 2.75 | V | |
Falling Input Voltage | 2.25 | 2.5 | 2.6 | V | |||
TSD | Thermal Shutdown Temperature | Rising Junction Temperature | 170 | °C | |||
Thermal Shutdown Hysteresis | 15 | ||||||
CONTROL (EN, SS/TR, PG, MODE/SYNC) | |||||||
VIH | High Level Input Voltage for MODE/SYNC Pin | 1.1 | V | ||||
VIL | Low Level Input Voltage for MODE/SYNC Pin | 0.3 | V | ||||
fSYNC | Frequency Range on MODE/SYNC Pin for Synchronization | requires a resistor from COMP/FSET to GND, see application section | 1.8 | 4 | MHz | ||
Duty Cycle of Synchronization Signal at MODE/SYNC Pin | 20% | 50% | 80% | ||||
Time to Lock to External Frequency | 50 | µs | |||||
VIH | Input Threshold Voltage for EN pin; Rising Edge | 1.06 | 1.1 | 1.15 | V | ||
VIL | Input Threshold Voltage for EN pin; Falling Edge | 0.96 | 1.0 | 1.05 | V | ||
ILKG | Input Leakage Current for EN, MODE/SYNC | VIH = VIN or VIL= GND | 150 | nA | |||
Resistance from COMP/FSET to GND for Logic Low | internal frequency setting with f = 2.25 MHz | 0 | 2.5 | kΩ | |||
voltage on COMP/FSET for logic high | internal frequency setting with f = 2.25 MHz | VIN | V | ||||
VTH_PG | UVP Power Good Threshold Voltage; dc Level | Rising (%VFB) | 92% | 95% | 98% | ||
UVP Power Good Threshold Voltage; dc Level | Falling (%VFB) | 87% | 90% | 93% | |||
OVP Power Good Threshold; dc Level | Rising (%VFB) | 107% | 110% | 113% | |||
OVP Power Good Threshold; dc Level | Falling (%VFB) | 104% | 107% | 111% | |||
Power Good De-glitch Time | for a high level to low level transition on power good | 40 | µs | ||||
VOL_PG | Power Good Output Low Voltage | IPG = 2 mA | 0.07 | 0.3 | V | ||
ILKG_PG | Input Leakage Current (PG) | VPG = 5 V | 100 | nA | |||
ISS/TR | SS/TR Pin Source Current | 2.1 | 2.5 | 2.8 | µA | ||
Tracking Gain | VFB / VSS/TR for nominal VFB = 0.6 V | 1 | |||||
Tracking Offset | feedback voltage with VSS/TR = 0 V for nominal VFB = 0.6 V | 17 | mV | ||||
POWER SWITCH | |||||||
RDS(ON) | High-Side MOSFET ON-Resistance | VIN ≥ 5 V | 37 | 60 | mΩ | ||
RDS(ON) | Low-Side MOSFET ON-Resistance | VIN ≥ 5 V | 15 | 35 | mΩ | ||
High-Side MOSFET leakage current | VIN = 6 V; V(SW) = 0 V | 30 | µA | ||||
Low-Side MOSFET leakage current | V(SW) = 6 V | 55 | µA | ||||
SW leakage | V(SW) = 0.6 V; current into SW pin | -0.025 | 30 | µA | |||
ILIMH | High-Side MOSFET Current Limit | dc value, for TPS62810; VIN = 3 V to 6 V | 4.8 | 5.6 | 6.55 | A | |
ILIMH | High-Side MOSFET Current Limit | dc value, for TPS62813; VIN = 3V to 6 V | 3.9 | 4.5 | 5.25 | A | |
ILIMH | High-Side MOSFET Current Limit | dc value, for TPS62812; VIN = 3 V to 6 V | 2.8 | 3.4 | 4.2 | A | |
ILIMH | High-Side MOSFET Current Limit | dc value, for TPS62811; VIN = 3 V to 6 V | 2.0 | 2.6 | 3.25 | A | |
ILIMNEG | Negative Valley Current Limit | dc value | -1.8 | A | |||
fS | PWM Switching Frequency Range | 1.8 | 2.25 | 4 | MHz | ||
fS | PWM Switching Frequency |
with COMP/FSET tied to VIN or GND | 2.025 | 2.25 | 2.475 | MHz | |
PWM Switching Frequency Tolerance | using a resistor from COMP/FSET to GND, fs = 1.8 MHz to 4 MHz | -19% | 18% | ||||
ton,min | Minimum on-time of HS FET | TJ = –40°C to 125°C, VIN = 3.3 V | 50 | 75 | ns | ||
ton,min | Minimum on-time of LS FET | VIN = 3.3 V | 30 | ns | |||
OUTPUT | |||||||
VFB | Feedback Voltage | adjustable output voltage versions | 0.6 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS6281302 | 0.8 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS6281206, TPS6281126, TPS6281326, TPS6281006 | 1.0 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS6281208, TPS6281008, TPS6281228 | 1.1 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS6281109 | 1.15 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS628110A, TPS628112A, TPS628122A, TPS628130A | 1.2 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS628132D | 1.35 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS628122G | 1.5 | V | |||
VFB | Feedback Voltage | fixed output voltage TPS628112M, TPS628120M, TPS628132D, TPS628100M, TPS628132M | 1.8 | V | |||
VFB | Feedback VoltageVoltage | fixed output voltage TPS628113H | 3.3 | V | |||
ILKG_FB | FB Input Leakage Current for Adjustable Voltage Versions | VFB = 0.6 V | 1 | 70 | nA | ||
ILKG_FB | FB Input Current for Fixed Voltage Versions | VFB voltage at target output voltage | 1 | µA | |||
VFB | Feedback Voltage Accuracy for Adjustable Voltage Versions | VIN ≥ VOUT + 1 V | PWM mode | -1% | 1% | ||
VFB | Feedback Voltage Accuracy for Fixed Voltage Versions | VIN ≥ VOUT + 1 V | PWM mode, Tj = –40°C to 125°C | -1% | 1% | ||
VFB | Feedback Voltage Accuracy for Fixed Voltage Versions | VIN ≥ VOUT + 1 V | PWM mode | -1% | 1.3% | ||
VFB | Feedback Voltage Accuracy | VIN ≥ VOUT + 1 V; VOUT ≥ 1.5 V |
PFM mode; Co,eff ≥ 22 µF, L = 0.47 µH |
-1% | 2% | ||
VFB | Feedback Voltage Accuracy | 1 V ≤ VOUT < 1.5 V | PFM mode; Co,eff ≥ 47 µF, L = 0.47 µH |
-1% | 2.5% | ||
VFB | Feedback Voltage Accuracy with Voltage Tracking | VIN ≥ VOUT + 1 V; VSS/TR = 0.3 V |
PWM mode | -1% | 7% | ||
Load Regulation | PWM mode operation | 0.05 | %/A | ||||
Line Regulation | PWM mode operation, IOUT= 1 A, VIN ≥ VOUT + 1 V | 0.02 | %/V | ||||
Output Discharge Resistance | 50 | Ω | |||||
tdelay | Start-up Delay Time | IOUT = 0 mA, Time from EN=high to start switching; VIN applied already | 135 | 250 | 470 | µs | |
tramp | Ramp time; SS/TR Pin Open | IOUT = 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit | 100 | 150 | 200 | µs |