JAJSOJ1E March 2004 – April 2022 TPS65130 , TPS65131
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
DC-DC STAGE (VPOS, VNEG) | |||||||
VPOS | Adjustable output voltage range | VIN+ 0.5 V | 15 | V | |||
VNEG | Adjustable output voltage range | –15 | –2 | V | |||
VREF | Reference voltage | IREF = 10 µA | 1.2 | 1.213 | 1.225 | V | |
IFBP | Positive feedback input bias current | VFBP = VREF | 50 | nA | |||
IFBN | Negative feedback input bias current | VFBN = 0.1 VREF | 50 | nA | |||
VFBP | Positive feedback regulation voltage | VIN = 2.7 V to 5.5 V | 1.189 | 1.213 | 1.237 | V | |
VFBN | Negative feedback regulation voltage | VIN = 2.7 V to 5.5 V | –0.024 | 0 | 0.024 | V | |
Total Output DC accuracy | 3% | ||||||
rDS(ON)(N) | Inverter switch ON-resistance | VIN = 3.6 V | 440 | 620 | mΩ | ||
VIN = 5 V | 330 | 530 | |||||
ILIMN | TPS65130 Inverter switch current limit | 2.7 V < VIN < 5.5 V | 700 | 800 | 900 | mA | |
ILIMN | TPS65131 Inverter switch current limit | VIN = 3.6 V | 1800 | 1950 | 2200 | mA | |
rDS(ON)(P) | Boost switch ON-resistance | VPOS = 5 V | 230 | 300 | mΩ | ||
VPOS = 10 V | 170 | 200 | |||||
ILIMP | TPS65130 Boost switch current limit | 2.7 V < VIN < 5.5 V, VPOS = 8 V | 700 | 800 | 900 | mA | |
ILIMP | TPS65131 Boost switch current limit | VIN = 3.6 V, VPOS = 8 V | 1800 | 1950 | 2200 | mA | |
CONTROL STAGE | |||||||
VIH | High level input voltage, ENP, ENN, PSP, PSN | 1.4 | V | ||||
VIL | Low level input voltage, ENP, ENN, PSP, PSN | 0.4 | V | ||||
IIN | Input current, ENP, ENN, PSP, PSN | ENP, ENN, PSP, PSN = GND or VIN | 0.01 | 0.1 | µA | ||
RBSW | Output resistance | 27 | kΩ | ||||
VIN | Input voltage range | 2.7 | 5.5 | V | |||
IQ | Quiescent current | VIN | VIN = 3.6 V, IPOS = INEG = 0, ENP = ENN = PSP = PSN = VIN, VPOS = 8 V, VNEG = –5 V | 300 | 500 | µA | |
VPOS | 100 | 120 | µA | ||||
VNEG | 100 | 120 | µA | ||||
ISD | Shutdown supply current | ENN = ENP = GND | 0.2 | 1.5 | µA | ||
VUVLO | Undervoltage lockout threshold | 2.1 | 2.35 | 2.7 | V | ||
Thermal shutdown | 150 | °C | |||||
Thermal shutdown hysteresis | Junction temperature decreasing | 5 | °C |