JAJSOJ1E March 2004 – April 2022 TPS65130 , TPS65131
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
Figure 8-1 uses the following parameters:
DESIGN PARAMETER | EXAMPLE VALUE | |||
---|---|---|---|---|
Input voltage range | 2.7 V to 5.5 V | |||
Boost converter output voltage, VPOS | R1 = 1 MΩ R2 = 130kΩ C9 = 6.8 pF | 10.5 V | ||
Inverting converter output voltage, VNEG | R3 = 1 MΩ R4 = 121.2 kΩ C10 = 7.5 pF | –10 V |
REFERENCE | SETUP | VALUE, DESCRIPTION |
---|---|---|
C1, C2 | — | 4.7 µF, ceramic, 6.3 V, X5R |
C3 | 0.1 µF, ceramic, 10 V, X5R | |
C4, C5 | 4 x 4.7 µF, ceramic, 25 V, X7R | |
C6 | 10 nF, ceramic, 16 V, X7R | |
C7 | 4.7 nF, 50 V, C0G | |
C8 | 220 nF, ceramic, 6.3 V, X5R | |
R1 | VPOS = 10.5 V | 1 MΩ |
VPOS = 15 V | 975 kΩ | |
R2 | VPOS = 10.5 V | 130 kΩ |
VPOS = 15 V | 85.8 kΩ | |
R3 | VNEG = –10 V | 1 MΩ |
VNEG = –15 V | 1.3 MΩ | |
R4 | VNEG = –10 V | 121.2 kΩ |
VNEG = –15 V | 104.8 kΩ | |
R7 | — | 100 Ω |
D1, D2 | Schottky, 1 A, 20 V, Onsemi MBRM120 | |
L1, L2 | Wurth Elektronik 7447789004 (TPS65130), EPCOS B82462-G4472 (TPS65131) | |
Q1 | MOSFET, P-channel, 12 V, 4 A, Vishay Si2323DS |