JAJS189T January 2006 – December 2023 TPS737
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VIN | Input voltage(1)(2) | 2.2 | 5.5 | V | ||||
VFB | Internal reference (DCQ package) | TJ = 25°C | 1.198 | 1.204 | 1.21 | V | ||
Internal reference (DRB and DRV packages) | TJ = 25°C | 1.192 | 1.204 | 1.216 | ||||
VOUT | Output voltage (TPS73701)(3) | VFB | 5.5 – VDO | V | ||||
Accuracy(1)(4) | Nominal | TJ = 25°C | –1 | 1 | % | |||
5.36 V < VIN < 5.5 V, VOUT = 5.08 V, 10 mA < IOUT < 800 mA, –40°C < TJ < 85°C, TPS73701 (DCQ) | –2 | 2 | ||||||
Over VIN, IOUT, and T | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1 A, legacy silicon | –3 | ±0.5 | 3 | ||||
VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1A, new silicon, M3 suffix | -1.5 | ±0.5 | 1.5 | |||||
ΔVOUT(ΔVIN) | Line regulation(1) | VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V | 0.01 | %/V | ||||
ΔVOUT(ΔIOUT) | Load regulation | 1 mA ≤ IOUT ≤ 1 A | 0.002 | %/mA | ||||
10 mA ≤ IOUT ≤ 1 A | 0.0005 | |||||||
VDO | Dropout voltage(5) (VIN = VOUT(nom) – 0.1 V) | IOUT = 1 A, legacy silicon | 130 | 500 | mV | |||
IOUT = 1 A, new silicon, M3 suffix | 122 | 250 | ||||||
ZOUT(DO) | Output impedance in dropout | 2.2 V ≤ VIN ≤ VOUT + VDO | 0.25 | Ω | ||||
ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | 1.05 | 1.6 | 2.2 | A | ||
IOS | Short-circuit current | VOUT = 0 V, legacy silicon | 450 | mA | ||||
VOUT = 0 V, new silicon, M3 suffix | 510 | |||||||
IREV | Reverse leakage current(6) (–IIN) | VEN ≤ 0.5 V, 0 V ≤ VIN ≤ VOUT | 0.1 | μA | ||||
IGND | GND pin current | IOUT = 10 mA | 400 | μA | ||||
IOUT = 1 A, legacy silicon | 1300 | |||||||
IOUT = 1 A, new silicon, M3 suffix | 880 | |||||||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.5 V, VOUT ≤ VIN ≤ 5.5 | 20 | nA | ||||
IFB | FB pin current (TPS73701) | 0.1 | 0.6 | μA | ||||
PSRR | Power-supply rejection ratio (ripple rejection) | f = 100 Hz, IOUT = 1 A | 58 | dB | ||||
f = 10 kHz, IOUT = 1 A | 37 | |||||||
Vn | Output noise voltage BW = 10 Hz to 100 kHz | COUT = 10 μF | 27 × VOUT | μVRMS | ||||
tSTR | Start-up time | VOUT = 3 V, RL = 30 Ω, COUT = 1 μF, legacy silicon | 600 | μs | ||||
VOUT = 3 V, RL = 30 Ω, COUT = 1 μF, new silicon, M3 suffix | 431 | |||||||
VEN(HI) | EN pin high (enabled) | 1.7 | VIN | V | ||||
VEN(LO) | EN pin low (shutdown) | 0 | 0.5 | V | ||||
IEN(HI) | EN pin current (enabled) | VEN = 5.5 V | 20 | nA | ||||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | ||||
Reset, temperature decreasing | 140 | |||||||
TJ | Operating junction temperature | –40 | 125 | °C |