JAJSTQ9E December   2001  – July 2024 TPS769-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Dissipation Ratings (Legacy Chip)
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
    8. 5.8 Typical Characteristics: Supported ESR Range
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Enable
      2. 6.3.2 Dropout Voltage
      3. 6.3.3 Current Limit
      4. 6.3.4 Undervoltage Lockout (UVLO)
      5. 6.3.5 Output Pulldown
      6. 6.3.6 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Adjustable Device Feedback Resistors
        2. 7.2.2.2 Recommended Capacitor Types
        3. 7.2.2.3 Input and Output Capacitor Requirements
        4. 7.2.2.4 Reverse Current
        5. 7.2.2.5 Feed-Forward Capacitor (CFF)
        6. 7.2.2.6 Power Dissipation (PD)
        7. 7.2.2.7 Estimating Junction Temperature
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Evaluation Module
        2. 8.1.1.2 Spice Models
        3. 8.1.1.3 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 ドキュメントの更新通知を受け取る方法
    4. 8.4 サポート・リソース
    5. 8.5 Trademarks
    6. 8.6 静電気放電に関する注意事項
    7. 8.7 用語集
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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発注情報

7.2.2.4 Reverse Current

Excessive reverse current potentially damages this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current occur are outlined in this section, all of which potentially exceed the absolute maximum rating of VOUT ≤ VIN + 0.3V.

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, use external protection to protect the device. Reverse current is not limited in the device, so use external limiting if extended reverse voltage operation is anticipated.

Figure 7-3 shows one approach for protecting the device.

TPS769-Q1 Example Circuit for Reverse Current Protection Using a Schottky Diode Figure 7-3 Example Circuit for Reverse Current Protection Using a Schottky Diode