SBVS133A February 2010 – November 2014 TPS783
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –55 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | –2000 | 2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | –500 | 500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage | 2.2 | 5.5 | V | |
VOUT | Output voltage | 1.8 | 4.2 | V | |
VEN | Enable voltage | 0 | VIN | V | |
IOUT | Output current | 0 | 150 | mA | |
TJ | Junction temperature | –40 | 105 | °C |
THERMAL METRIC(1) | TPS783xx | UNIT | |
---|---|---|---|
DDC (SOT) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 193.0 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 40.0 | |
RθJB | Junction-to-board thermal resistance | 34.3 | |
ψJT | Junction-to-top characterization parameter | 0.9 | |
ψJB | Junction-to-board characterization parameter | 34.1 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VIN | Input voltage range | 2.2 | 5.5 | V | ||||
VOUT | DC output accuracy | Nominal | TJ = 25°C | –2% | 2% | |||
Over VIN, IOUT, temperature | VOUT + 0.5 V ≤ VIN ≤ 5.5 V, 100 μA ≤ IOUT ≤ 150 mA |
–3.0% | ±2.0% | 3.0% | ||||
ΔVO(ΔVI) | Line regulation | VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V | ±1.0% | |||||
ΔVO(ΔIO) | Load regulation | 100 μA ≤ IOUT ≤ 150 mA | ±1.0% | |||||
VDO | Dropout voltage(1) | VIN = 95% VOUT(nom), IOUT = 150 mA | 130 | 250 | mV | |||
ILIM | Output current limit | VOUT = 0.90 × VOUT(nom) | 150 | 230 | 400 | mA | ||
IGND | GND pin current | IOUT = 0 mA | 420 | 800 | nA | |||
IOUT = 150 mA | 8 | μA | ||||||
IEN | EN pin current | VIN = VEN = 5.5 V | 0.07 | 40 | nA | |||
ISHDN(GND) | Shutdown current at GND pin | VEN ≤ 0.4 V, VIN(min) ≤ VIN < 5.5 V(2) | 18 | 150 | nA | |||
ISHDN(OUT) | Shutdown current at OUT pin (leakage)(4) | VIN = open, VEN = 0.4 V, VOUT = VOUT(nom) |
137 | 500 | nA | |||
VEN(HI) | Enable high-level voltage | VIN = 5.5 V | 1.2 | VIN | V | |||
VEN(LO) | Enable low-level voltage | VIN = 5.5 V | 0 | 0.4 | V | |||
PSRR | Power-supply rejection ratio | VIN = 4.3 V, VOUT = 3.0 V, IOUT = 150 mA |
f = 10 Hz | 40 | dB | |||
f = 100 Hz | 20 | dB | ||||||
f = 1 kHz | 15 | dB | ||||||
Vn | Output noise voltage | BW = 100 Hz to 100 kHz, VIN = 2.2 V, VOUT = 1.2 V, IOUT = 1 mA |
86 | μVRMS | ||||
tSTR | Startup time(3) | COUT = 1.0 μF, VOUT = 10% VOUT(nom) to VOUT = 90% VOUT(nom) |
500 | μs | ||||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | ||||
Reset, temperature decreasing | 140 | °C | ||||||
TJ | Operating junction temperature | –40 | 125 | °C |
IOUT = 5 mA, VOUT(nom) = 3.0 V | ||
VIN = 3.5 V, VOUT(nom) = 3.0 V | ||
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom) | ||
CIN = 1 μF, COUT = 2.2 μF, VIN = 3.5 V, VOUT(nom) = 3.0 V | ||
VIN = 3.5 V, VOUT(nom) = 3.0 V, COUT = 2.2 μF | ||
IOUT = 150 mA, VOUT(nom) = 3.0 V | ||
VOUT(nom) = 3.0 V, VIN = 0.95 × VOUT(nom) | ||
IOUT = 0 mA, VOUT(nom) = 3.0 V | ||
IOUT = 100 μA, VOUT(nom) = 3.0 V |
VIN = 3.5 V, VOUT(nom) = 3.0 V | ||