JAJSGN3C December   2018  – December 2022 TPS7A25

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. 7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Output Enable
      2. 8.3.2 Dropout Voltage
      3. 8.3.3 Current Limit
      4. 8.3.4 Undervoltage Lockout (UVLO)
      5. 8.3.5 Thermal Shutdown
      6. 8.3.6 Power Good
      7. 8.3.7 Active Overshoot Pulldown Circuitry
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Functional Mode Comparison
      2. 8.4.2 Normal Operation
      3. 8.4.3 Dropout Operation
      4. 8.4.4 Disabled
        1.       Application and Implementation
          1. 9.1 Application Information
            1. 9.1.1 Adjustable Device Feedback Resistors
            2. 9.1.2 Recommended Capacitor Types
            3. 9.1.3 Input and Output Capacitor Requirements
            4. 9.1.4 Reverse Current
            5. 9.1.5 Feed-Forward Capacitor (CFF)
            6. 9.1.6 Power Dissipation (PD)
            7. 9.1.7 Estimating Junction Temperature
            8. 9.1.8 Special Consideration for Line Transients
          2. 9.2 Typical Application
            1. 9.2.1 Design Requirements
            2. 9.2.2 Detailed Design Procedure
              1. 9.2.2.1 Transient Response
              2. 9.2.2.2 Selecting Feedback Divider Resistors
              3. 9.2.2.3 Thermal Dissipation
            3. 9.2.3 Application Curve
          3. 9.3 Power Supply Recommendations
          4. 9.4 Layout
            1. 9.4.1 Layout Guidelines
            2. 9.4.2 Layout Examples
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 サポート・リソース
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  10. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DRV|6
サーマルパッド・メカニカル・データ
発注情報

9.1.4 Reverse Current

Excessive reverse current can damage this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT ≤ VIN + 0.3 V.

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, external protection is recommended to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated.

Figure 9-1 shows one approach for protecting the device.

GUID-7E72B42C-F600-4A3A-A3E2-18EECFB41055-low.gif Figure 9-1 Example Circuit for Reverse Current Protection Using a Schottky Diode

Figure 9-2 shows another, more commonly used, approach in high input voltage applications.

GUID-5BD80D3D-0A3C-4E3E-A683-0D500CA39FB5-low.gifFigure 9-2 Reverse Current Prevention Using A Diode Before the LDO