JAJSH18A March   2019  – September 2019 TPS7A78

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      ハーフブリッジ構成の標準的な回路図
      2.      フルブリッジ構成の標準的な回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Active Bridge Control
      2. 8.3.2 Full-Bridge (FB) and Half-Bridge (HB) Configurations
      3. 8.3.3 4:1 Switched-Capacitor Voltage Reduction
      4. 8.3.4 Undervoltage Lockout Circuits (VUVLO_SCIN) and (VUVLO_LDO_IN)
      5. 8.3.5 Dropout Voltage Regulation
      6. 8.3.6 Current Limit
      7. 8.3.7 Programmable Power-Fail Detection
      8. 8.3.8 Power-Good (PG) Detection
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Dropout Mode
      3. 8.4.3 Disabled Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended Capacitor Types
      2. 9.1.2 Input and Output Capacitors Requirements
      3. 9.1.3 Startup Behavior
      4. 9.1.4 Load Transient
      5. 9.1.5 Standby Power and Output Efficiency
      6. 9.1.6 Reverse Current
      7. 9.1.7 Switched-Capacitor Stage Output Impedance
      8. 9.1.8 Power Dissipation (PD)
      9. 9.1.9 Estimating Junction Temperature
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Calculating the Cap-Drop Capacitor CS
          1. 9.2.2.1.1 CS Calculations for the Typical Design
        2. 9.2.2.2 Calculating the Surge Resistor RS
          1. 9.2.2.2.1 RS Calculations for the Typical Design
        3. 9.2.2.3 Checking for the Device Maximum ISHUNT Current
          1. 9.2.2.3.1 ISHUNT Calculations for the Typical Design
        4. 9.2.2.4 Calculating the Bulk Capacitor CSCIN
          1. 9.2.2.4.1 CSCIN Calculations for the Typical Design
        5. 9.2.2.5 Calculating the PFD Pin Resistor Dividers for a Power-Fail Detection
          1. 9.2.2.5.1 PFD Pin Resistor Divider Calculations for the Typical Design
        6. 9.2.2.6 Summary of the Typical Application Design Components
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 開発サポート
        1. 12.1.1.1 評価基板
        2. 12.1.1.2 SIMPLIS モデル
      2. 12.1.2 デバイスの項目表記
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.1.6 Reverse Current

Excessive reverse current can damage the TPS7A78. Reverse current flows through the intrinsic body diode of the pass-transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current can occur are:

  • If the device has a large CLDO_OUT and the input supply collapses with little or no load current
  • The LDO_OUT pin is biased when the input supply is not present
  • The LDO_OUT pin is biased above the voltage of the LDO_IN pin

If reverse current flow is expected in the application, external protection is recommended to provide protect. Reverse current is not limited within the device, so external limiting is required, as illustrated in Figure 30 and Figure 31, if extended reverse-voltage operation is anticipated.

TPS7A78 TPS7A78-Rev1.gifFigure 30. Example Circuit for Reverse Current Protection Using a Schottky Diode
TPS7A78 TPS7A78-Rev2.gifFigure 31. Example Circuit for Reverse Current Protection Using a P-Channel FET