JAJSDP9 データシート

JAJSDP9A August 2017 – September 2017 TPS7A88-Q1

PRODUCTION DATA.

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）

RTJ|20

サーマルパッド・メカニカル・データ

発注情報

jajsdp9a_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range and all voltages with respect to GND (unless otherwise noted)⁽¹⁾ ⁽³⁾

		MIN	MAX	UNIT
Voltage	INx, PGx, ENx	–0.3	7	V
	OUTx , SS_CTRLx	–0.3	V_INx + 0.3⁽²⁾
	NR/SSx, FBx	–0.3	3.6
Current	OUTx	Internally limited	Internally limited	A
Current	PGx (sink current into device)		5	mA
Operating junction temperature, T_J		–55	150	°C
Storage temperature, T_stg		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The absolute maximum rating is V_INx + 0.3 V or 7 V, whichever is smaller.

(3) Lowercase x indicates that the specification under consideration applies to both channel 1 and channel 2, one channel at a time.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±750	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_INx	Input supply voltage range	1.4	6.5	V
I_OUTx	Output current	0	1	A
C_INx	Input capacitor, each input	10		µF
C_OUTx	Output capacitor, each output	10		µF
C_NR/SSx	Noise-reduction capacitor		1	µF
R_PG	Power-good pullup resistance	10	100	kΩ
T_J	Junction temperature range	–40	140	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS7A88-Q1	UNIT
		RTJ (WQFN)
		20 PINS
R_θJA	Junction-to-ambient thermal resistance	39.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	27.7	°C/W
R_θJB	Junction-to-board thermal resistance	16.9	°C/W
ψ_JT	Junction-to-top characterization parameter	0.3	°C/W
ψ_JB	Junction-to-board characterization parameter	16.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	1.5	°C/W

(1) For more information about traditional and new thermal metrics, see theSemiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating temperature range (T_J = –40°C to +140°C), V_INx = 1.4 V, V_OUTx(TARGET) = 0.8 V, I_OUTx = 5 mA, V_ENx = 1.4 V, C_OUTx = 10 μF, C_NR/SSx = 0 nF, C_FFx = 0 nF, SS_CTRL_x = GND, PG_x pin pulled up to V_INx with 100 kΩ, and for each channel; typical values are at T_J = 25°C ⁽³⁾ (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_INx	Input supply voltage range		1.4		6.5	V
V_REF	Reference voltage			0.8		V
V_UVLO	Input supply UVLO	V_INx rising		1.31	1.39	V
V_HYS	V_UVLO Hysteresis			290		mV
V_OUTx	Output voltage range	T_J = –40°C to +125°C	0.8 – 1%		5.15 + 1%	V
	Output voltage range		0.8 – 1.5%		5.15 + 1%
	Output voltage accuracy⁽¹⁾⁽²⁾	0.8 V ≤ V_OUTx ≤ 5.15 V 5 mA ≤ I_OUTx ≤ 1 A T_J = –40°C to +125°C	–1%		1%
	Output voltage accuracy⁽¹⁾⁽²⁾	0.8 V ≤ V_OUTx ≤ 5.15 V 5 mA ≤ I_OUTx ≤ 1 A	–1.5%		1%
ΔV_OUTx(ΔVINx)	Line regulation	I_OUTx= 5 mA 1.4 V ≤ V_INx ≤ 6.5 V		0.003		%/V
ΔV_{OUTx(ΔIOUTx)}	Load regulation	5 mA ≤ I_OUTx ≤ 1 A		0.03		%/A
V_DO	Dropout voltage	V_INx ≥ 1.4 V 0.8 V ≤ V_OUTx ≤ 5.15 V I_OUTx = 1 A V_FBx = 0.8 V – 3%, T_J = –40°C to +125°C			225	mV
V_DO	Dropout voltage	V_INx ≥ 1.4 V, 0.8 V ≤ V_OUTx ≤ 5.15 V, I_OUTx = 1 A, V_FBx = 0.8 V – 3%			250	mV
I_LIM	Output current limit	V_OUTx forced at 0.9 × V_OUTx(TARGET), V_INx = V_OUTx(TARGET) + 300 mV	1.5	1.7	1.9	A
I_GND	GND pin current	Both channels enabled, per channel V_INx = 6.5 V, I_OUTx = 5 mA		2.1	3.5	mA
I_GND	GND pin current	Both channels enabled, per channel V_INx = 1.4 V, I_OUTx = 1 A			4	mA
I_SDN	Shutdown GND pin current	Both channels shutdown, per channel, PGx = (open) V_INx = 6.5 V V_ENx = 0.4 V		0.1	15	μA
I_ENx	ENx pin current	V_INx = 6.5 V 0 V ≤ V_ENx ≤ 6.5 V	–0.5		0.5	μA
V_IL(ENx)	ENx pin low-level input voltage (device disabled)		0		0.4	V
V_IH(ENx)	ENx pin high-level input voltage (device enabled)		1.1		6.5	V
I_{SS_CTRLx}	SS_CTRLx pin current	V_INx = 6.5 V 0 V ≤ V_{SS_CTRLx} ≤ 6.5 V	–0.2		0.2	μA
V_IT(PGx)	PGx pin threshold	For PGx transitioning low with falling V_OUTx; expressed as a percentage of V_OUTx(TARGET)	82%	88.9%	93%
V_hys(PGx)	PGx pin hysteresis	For PGx transitioning high with rising V_OUTx; expressed as a percentage of V_OUTx(TARGET)		1%
V_OL(PGx)	PGx pin low-level output voltage	V_OUTx < V_IT(PGx), I_PGx = –1 mA (current into device)			0.4	V
I_lkg(PGx)	PGx pin leakage current	V_OUTx > V_IT(PGx) V_PGx = 6.5 V			1	µA
I_NR/SSx	NR/SSx pin charging current	V_NR/SSx = GND 1.4 V ≤ V_INx ≤ 6.5 V V_{SS_CTRLx} = GND	4	6.2	10	µA
I_NR/SSx	NR/SSx pin charging current	V_NR/SSx = GND 1.4 V ≤ V_INx ≤ 6.5 V V_{SS_CTRLx} = V_INx	65	100	150	µA
I_FBx	FBx pin leakage current	V_INx = 6.5 V V_FBx = 0.8 V	–100		100	nA
PSRR	Power-supply ripple rejection	f = 500 kHz V_INx = 3.8 V V_OUTx = 3.3 V I_OUTx = 750 mA C_NR/SSx = 10 nF C_FFx = 10 nF		40		dB
V_n	Output noise voltage	BW = 10 Hz to 100 kHz V_INx = 1.8 V V_OUTx = 0.8 V I_OUTx = 1 A C_NR/SSx = 1 µF C_FFx = 100 nF		3.8		μV_RMS
	Noise spectral density	f = 10 kHz V_INx = 1.8 V V_OUTx = 0.8 V I_OUTx = 1 A C_NR/SSx = 10 nF C_FFx = 10 nF		11		nV/√Hz
R_diss	Output active discharge resistance	V_ENx = GND		250		Ω
T_sd	Thermal shutdown temperature	Shutdown, temperature increasing		160		°C
T_sd	Thermal shutdown temperature	Reset, temperature decreasing		140		°C

(1) When the device is connected to external feedback resistors at the FBx pin, external resistor tolerances are not included.

(2) The device is not tested under conditions where V_INx > V_OUTx + 2.5 V and I_OUTx = 1 A; the power dissipation is higher than the maximum rating of the package. This accuracy specification does not apply on any application condition that exceeds the power dissipation limit of the package under test.

(3) Lowercase x indicates that the specification under consideration applies to both channel 1 and channel 2, one channel at a time.

6.6 Typical Characteristics

at T_J = 25°C, 1.4 V ≤ V_INx < 6.5 V, V_INx ≥ V_OUTx(TARGET) + 0.3 V, V_OUTx = 0.8 V, SS_CTRLx = GND, I_OUTx = 5 mA, V_ENx = 1.1 V, C_OUTx = 10 μF, C_NR/SSx = 0 nF, C_FFx = 0 nF, PGx pin pulled up to V_OUTx with 100 kΩ, and SS_CTRLx = GND (unless otherwise noted)

V_OUTx = 1.2 V, V_INx = V_ENx = 1.7 V
C_OUTx = 10 µF C_NR/SSx = C_FFx = 10 nF

Figure 1. Power-Supply Rejection vs Output Current

V_OUTx = 1.2 V, I_OUTx = 1.0 A, C_OUTx = 10 µF,
C_NR/SSx = C_FFx = 10 nF

Figure 3. Power-Supply Rejection vs Input Voltage

V_OUTx = 1.2 V, V_INx = V_ENx = 1.7 V, I_OUTx = 1 A, C_FFx = 10 nF

Figure 5. Power-Supply Rejection vs Output Capacitance

V_OUTx = 1.8 V, I_OUTx = 100 mA, C_OUTx = 10 µF,
C_NR/SSx = C_FFx = 10 nF

Figure 7. Channel-to-Channel Output Voltage Isolation vs Frequency

V_INx = 1.7 V, V_OUTx = 1.2 V, I_OUTx = 1A, V_RMS BW = 10 Hz to 100 kHz, C_OUTx = 10 µF, C_FFx = 10 nF

Figure 9. Spectral Noise Density vs C_NR/SSx

V_OUTx = 1.2 V, I_OUTx = 1 A, C_OUTx = 10 µF, C_NR/SSx = 10 nF

Figure 11. Spectral Noise Density vs V_INx

V_OUTx = 1.8 V, I_OUTx = 1 A, C_FFx = 0.01 µF,
BW = 10 Hz to 100 kHz

Figure 13. RMS Output Noise vs C_NR/SSx

V_INx = 1.5 V, V_OUTx = 1.2 V, I_OUTx = 100 mA to 1 A to 100 mA at 1 A/µs, C_OUTx = 10 µF

Figure 15. Load Transient Response

V_INx = 1.4 V to 6.5 V to 1.4 V at 2 V/µs, V_OUTx = 0.8 V,
I_OUTx = 1 A, C_NR/SSx = C_FFx = 10 nF

Figure 17. Line Transient

V_INx = 1.4 V, SS_CTRLx = GND, C_NR/SSx = 10 nF

Figure 19. Start-Up

V_INx = 1.4 V, SS_CTRLx = V_INx, C_NR/SSx = 1 µF

Figure 21. Start-Up

I_OUTx = 1 A. V_FB = 95% × V_FB(nom)

Figure 23. Dropout Voltage vs Input Voltage

V_INx = 1.4 V, V_OUTx = 0.8 V

Figure 25. Load Regulation

V_INx = 3.6 V, V_OUTx = 3.3 V

Figure 27. Load Regulation

V_INx = 5.3 V, V_OUTx = 5 V

Figure 29. Load Regulation

Both channels enabled

Figure 31. Ground Current vs Input Voltage

V_INx = 1.4 V, 6.5 V

Figure 33. PG Low Level vs Temperature

V_INx = V_PGx = 6.5 V

Figure 35. PG Leakage Current vs Temperature

SS_CTRLx = V_INx

Figure 37. Soft-Start Current vs Temperature

Figure 39. Input UVLO Threshold vs Temperature

V_OUTx = 1.2 V, V_INx = V_ENx = 1.7 V, I_OUTx = 1 A, C_OUTx = 10 µF, C_FFx = 10 nF

Figure 2. Power-Supply Rejection vs C_NR/SSx

V_OUTx = 3.3 V, V_INx = V_ENx = 3.8 V, C_OUTx = 10 µF, C_NR/SSx = C_FFx = 10 nF

Figure 4. Power-Supply Rejection vs Output Current

V_OUTx = 3.3 V, I_OUTx = 1 A, C_OUTx = 10 µF, C_NR/SSx = C_FFx = 10 nF

Figure 6. Power-Supply Rejection vs Input Voltage

V_INx = V_OUTx + 1 V, I_OUTx = 1 A, V_RMS BW = 10 Hz to 100 kHz, C_OUTx = 10 µF, C_NR/SSx = C_FFx = 10 nF

Figure 8. Spectral Noise Density vs Output Voltage

V_INx = 3.8 V, V_OUTx = 3.3 V, I_OUTx = 1 A, V_RMS BW = 10 Hz to 100 kHz, C_OUTx = 10 µF, C_NR/SSx = 10 nF

Figure 10. Spectral Noise Density vs C_FFx

V_OUTx = 1.8 V, I_OUTx = 1 A, V_RMS BW = 10 Hz to 100 kHz,
C_FFx = 0.01 µF

Figure 12. Spectral Noise Density vs C_OUTx

V_OUTx = 1.8 V, I_OUTx = 1 A, C_NR/SSx = 1 µF,
BW = 10 Hz to 100 kHz

Figure 14. RMS Output Noise vs C_FFx

V_INx = 5.5 V, V_OUTx = 5.0 V, I_OUTx = 100 mA to 1 A to 100 mA at 1 A/µs, C_OUTx = 10 µF

Figure 16. Load Transient Response ()

V_INx = 1.4 V, SS_CTRLx = GND, C_NR/SSx = 0 nF

Figure 18. Start-Up

V_INx = 1.4 V, SS_CTRLx = V_INx, C_NR/SSx = 10 nF

Figure 20. Start-Up

V_INx = 5.5 V. V_FB = 95% × V_FB(nom)

Figure 22. Dropout Voltage vs Output Current

Both channels

Figure 24. Shutdown Current vs Input Voltage

V_OUTx = 0.8 V, I_OUTx = 50 mA

Figure 26. Line Regulation

V_OUTx = 3.3 V, I_OUTx = 10 mA

Figure 28. Line Regulation

V_OUTx = 5 V, I_OUTx = 5 mA

Figure 30. Line Regulation

Both channels enabled

Figure 32. Ground Current vs Output Current

V_INx = 1.4 V, 6.5 V

Figure 34. PG Threshold vs Temperature

SS_CTRLx = GND

Figure 36. Soft-Start Current vs Temperature

V_INx = 1.4 V

Figure 38. Enable Threshold vs Temperature

V_INx = 1.4 V

Figure 40. PG Threshold vs Temperature