SUPPLY |
IQ |
Quiescent current into VIN |
No load, device not switching |
|
20 |
35 |
µA |
ISD |
Shutdown current into VIN |
EN = Low |
|
1.5 |
7.4 |
µA |
VUVLO |
Under voltage lock out threshold |
VIN falling |
2.6 |
2.7 |
2.8 |
V |
VIN rising |
2.8 |
2.9 |
3.0 |
V |
TJSD |
Thermal shutdown threshold |
TJ rising |
|
160 |
|
°C |
TJ falling |
|
140 |
|
°C |
LOGIC INTERFACE (EN) |
VIH |
High-level input voltage |
|
0.9 |
0.65 |
|
V |
VIL |
Low-level input voltage |
|
|
0.45 |
0.3 |
V |
Ilkg(EN) |
Input leakage current into EN pin |
EN = High |
|
0.01 |
1 |
µA |
CONTROL (SS/TR, PG) |
ISS/TR |
SS/TR pin source current |
|
2.1 |
2.5 |
2.8 |
µA |
VPG |
Power good threshold |
VOUT rising, referenced to VOUT nominal |
92% |
95% |
99% |
|
VOUT falling, referenced to VOUT nominal |
87% |
90% |
94% |
|
VPG,OL |
Power good low-level voltage |
Isink = 2mA |
|
0.1 |
0.3 |
V |
Ilkg(PG) |
Input leakage current into PG pin |
VPG = 1.8V |
|
1 |
400 |
nA |
OUTPUT |
VFB |
Feedback regulation voltage |
PWM mode |
|
785 |
800 |
815 |
mV |
TJ = 0°C to 85°C |
788 |
800 |
812 |
PSM |
COUT = 22µF |
785 |
800 |
823 |
COUT = 2x22µF, TJ = 0°C to 85°C |
788 |
800 |
815 |
Ilkg(FB) |
Feedback input leakage current |
VFB = 0.8V |
|
1 |
100 |
nA |
|
Line regulation |
IOUT = 1A, VOUT = 1.8V |
|
0.002 |
|
%/V |
|
Load regulation |
IOUT = 0.5A to 2A, VOUT = 1.8V |
|
0.12 |
|
%/A |
POWER SWITCH |
RDS(on) |
High-side FET on-resistance |
ISW = 500mA, VIN ≥ 6V |
|
90 |
170 |
mΩ |
ISW = 500mA, VIN = 3V |
|
120 |
|
Low-side FET on-resistance |
ISW = 500mA, VIN ≥ 6V |
|
40 |
70 |
ISW = 500mA, VIN = 3V |
|
50 |
|
RDP |
Dropout resistance |
100% mode, VIN ≥ 6V |
|
125 |
|
mΩ |
100% mode, VIN = 3V |
|
160 |
|
ILIMF |
High-side FET switch current limit |
VIN = 6V, TJ = 25°C |
3 |
3.5 |
4 |
A |
fSW |
PWM switching frequency |
IOUT = 1A, VOUT = 1.8V |
|
2.0 |
|
MHz |