JAJSHS0C March 2019 – March 2021 TPS92682-Q1
PRODUCTION DATA
The TPS92682-Q1 contains an N-channel gate driver that switches the output GATEx between VCC and GND. A peak source and sink current of 500 mA allows controlled slew-rate of the MOSFET gate and drain voltages, limiting the conducted and radiated EMI generated by switching.
The gate driver supply current, ICC(GATE), depends on the total gate drive charge (QG) of the MOSFET and the operating frequency of the converter, fSW, ICC(GATE) = QG × fSW. Select a MOSFET with a low gate charge specification to limit the junction temperature rise and switch transition losses.
It is important to consider a MOSFET threshold voltage when operating in the dropout region (input voltage VIN is below the VCC regulation level). TI recommends a logic level device with a threshold voltage below 5 V when the device is required to operate at an input voltage less than 7 V.