JAJSHV7F August 2019 – November 2021 TPSM82821 , TPSM82821A , TPSM82822 , TPSM82822A , TPSM82823 , TPSM82823A
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ | Quiescent current into the VIN | EN = High, no load, device not switching | 4 | 10 | µA | |
ISD | Shutdown current into the VIN | EN = Low, TJ = –40°C to 85°C | 0.05 | 0.5 | µA | |
IQ | Quiescent current | EN = High, no load, device switching, FPWM devices | 8 | mA | ||
VUVLO | Undervoltage lockout threshold | VIN falling | 2.1 | 2.2 | 2.3 | V |
Undervoltage lockout hysteresis | VIN rising | 160 | mV | |||
TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
LOGIC INTERFACE EN | ||||||
VIH | High-level input voltage | 1.0 | V | |||
VIL | Low-level input voltage | 0.4 | V | |||
Ilkg(EN) | Input leakage current into EN pin | EN = High | 0.01 | 0.1 | µA | |
SOFT START, POWER GOOD | ||||||
tSS | Soft-start time | Time from EN high to 95% of VOUT nominal | 1.25 | ms | ||
VPGTH | Power-good lower threshold | VPG rising, VFB referenced to VFB nominal | 94% | 96% | 98% | |
VPG falling, VFB referenced to VFB nominal | 90% | 92% | 94% | |||
Power-good upper threshold | VPG falling, VFB referenced to VFB nominal | 103% | 105% | 107% | ||
VPG rising, VFB referenced to VFB nominal | 108% | 110% | 112% | |||
VPG,OL | Low-level output voltage | Isink = 1 mA | 0.4 | V | ||
Ilkg(PG) | Input leakage current into PG pin | VPG = 5 V | 0.01 | 0.1 | µA | |
OUTPUT | ||||||
VOUT | Output voltage accuracy | TPSM828211, TPSM828221, PWM mode | 1.188 | 1.2 | 1.212 | V |
TPSM828212, TPSM828222, PWM mode | 1.782 | 1.8 | 1.818 | |||
TPSM828213, TPSM828223, PWM mode | 2.475 | 2.5 | 2.525 | |||
TPSM828214, TPSM828224, PWM mode | 3.267 | 3.3 | 3.333 | |||
VFB | Feedback regulation voltage | PWM mode | 594 | 600 | 606 | mV |
Ilkg(FB) | Feedback input leakage current | VFB = 0.6 V | 0.01 | 0.05 | µA | |
IDIS | Output discharge current | EN = Low, VSW = 0.4 V | 75 | 400 | mA | |
POWER SWITCH | ||||||
RDS(on) | High-side FET on-resistance | 26 | mΩ | |||
Low-side FET on-resistance | 26 | mΩ | ||||
RDP |
Dropout resistance | TPSM82821, TPSM82821A, 100% mode. VIN = 2.7 V, TJ = 25°C | 115 | 145 | mΩ | |
TPSM82822, TPSM82822A, 100% mode. VIN = 2.7 V, TJ = 25°C | 90 | 120 | ||||
TPSM82823, TPSM82823A, 100% mode. VIN = 2.7 V, TJ = 25°C | 70 | 95 | ||||
ILIMF | High-side FET switch current limit | TPSM82821A | 1.7 | 2.1 | 2.4 | A |
ILIMF | High-side FET switch current limit | TPSM82821 | 1.75 | 2.2 | 2.75 | A |
TPSM82822, TPSM82822A | 2.7 | 3.3 | 3.9 | |||
TPSM82823, TPSM82823A | 3.7 | 4.3 | 5.0 | |||
ILIM | Low-side FET negative current limit, DC | TPSM82821A/TPSM82822A/TPSM82823A | –1.6 | A | ||
fSW | PWM switching frequency | IOUT = 1 A | 4 | MHz |