JAJSMX6C october 2022 – july 2023 TPSM82912 , TPSM82913 , TPSM82913E
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
IQ | Quiescent current | EN = High, no load, device switching, fsw = 1 MHz | 5 | mA | ||
ISD | Shutdown current | EN = GND | 0.3 | 70 | µA | |
VUVLO | Under voltage lockout | VIN rising | 2.85 | 2.92 | 3.0 | V |
VUVLO | Under voltage lockout | VIN rising | 3.04 | V | ||
VHYS | Under voltage lockout hysteresis | 200 | mV | |||
TJSD | Thermal shutdown threshold | TJ rising | 170 | °C | ||
Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
CONTROL and INTERFACE | ||||||
VH_EN | High-level input-threshold voltage at EN/SYNC | 0.97 | 1.01 | 1.04 | V | |
VL_EN | Low-level input-threshold voltage at EN/SYNC | 0.87 | 0.9 | 0.93 | V | |
VH_SYNC | High-level input-threshold clock signal on EN/SYNC | EN/SYNC = clock | 1.1 | V | ||
VL_SYNC | Low-level input-threshold clock signal on EN/SYNC | EN/SYNC = clock | 0.4 | V | ||
IEN,LKG | Input leakage current into EN/SYNC | EN/SYNC = GND or VIN | 5 | 160 | nA | |
RPD | Pull-down resistor on EN/SYNC | EN/SYNC = Low | 330 | 500 | kΩ | |
tdelay | Enable delay time | Time from EN/SYNC high to device starts switching, RS-CONF = 80.6 kΩ | 1 | ms | ||
INR/SS | NR/SS source current | 67.5 | 75 | 82.5 | µA | |
RS-CONF | S-CONF resistor step range accuracy | RS-CONF tolerance for all settings according to Table 7-1 | -4 | +4 | % | |
CS-CONF | Maximum capacitance connected to S-CONF pin | 30 | pF | |||
VPG | Power good threshold | VFB rising, referenced to VFB nominal | 93 | 95 | 98 | % |
VPG | Power good threshold | VFB falling, referenced to VFB nominal | 88 | 90 | 93 | % |
VPG,OL | Low-level output voltage at PG pin | ISINK = 1 mA | 0.4 | V | ||
IPG,LKG | Input leakage current into PG pin | VPG = 5 V | 5 | 500 | nA | |
tPG,DLY | Power good delay time | VFB falling | 8 | µs | ||
OUTPUT | ||||||
ton | Minimum on-time | VIN ≥ 5 V, Iout = 1 A | 35 | 70 | ns | |
toff | Minimum off-time | VIN ≥ 5 V, Iout = 1 A | 50 | 60 | ns | |
VFB | Feedback regulation accuracy | –40℃ ≤ TJ ≤ 125℃ | 0.792 | 0.8 | 0.808 | V |
IFB,LKG | Input leakage current into FB | VFB = 0.8 V | 1 | 70 | nA | |
PSRR | Power supply rejection ratio | VIN = 12 V, 1.2 VOUT, 1 A, CNR/SS = 220 nF, fsw = 1 MHz, CFF = open, COUT = 3 x 22 µF, f ≤ 100 kHz | 65 | dB | ||
VNRMS | Output voltage RMS noise | VIN = 12 V, BW = 100 Hz to 100 kHz, CNR/SS = 220 nF, fSW = 1 MHz, VOUT = 1.2 V, CFF = open, COUT = 3 x 22 µF | 27.4 | µVRMS | ||
VNRMS | Output voltage RMS noise | VIN = 5 V, BW = 100 Hz to 100 kHz, CNR/SS = 220 nF, fSW = 2.2 MHz, VOUT = 1.2 V, CFF = open, COUT = 3 x 22 µF | 13.3 | µVRMS | ||
Vopp | Output ripple voltage at fSW | VIN = 12 V, fSW = 1 MHz, VOUT = 1.2 V, COUT = 3 x 22 µF, Lf = 10 nH, Cf = 2 x 22 µF | 9 | µVRMS | ||
Vopp | Output ripple voltage at fSW | VIN = 5 V, fSW = 2.2 MHz, VOUT = 1.2V, COUT = 3 x 22 µF, Lf = 10 nH, Cf = 2 x 22 uF | < 3 | µVRMS | ||
RDIS | Output discharge resistance | EN/SYNC = GND, VOUT = 1.2 V, VIN ≥ 5 V. See Section 6.6 for plot. | 7 | Ω | ||
RDIS | Output discharge resistance | EN/SYNC = GND, VOUT = 5 V, VIN ≥ 5 V. See Section 6.6 for plot. | 32 | Ω | ||
fSW | Switching frequency | 2.2-MHz setting | 1.98 | 2.2 | 2.42 | MHz |
fSW | Synchronization range | 2.2-MHz setting | 1.9 | 2.2 | 2.42 | MHz |
fSW | Switching frequency | 1-MHz setting | 0.9 | 1 | 1.18 | MHz |
fSW | Synchronization range | 1-MHz setting | 0.86 | 1 | 1.2 | MHz |
DSYNC | Synchronization duty cycle | 45 | 55 | % | ||
tsync_delay | Synchronization phase delay | Phase delay from EN/SYNC rising edge to SW rising edge | 90 | ns | ||
ISWpeak | Peak switch current limit | TPSM82912(1) | 2.9 | 3.5 | 4.0 | A |
ISWpeak | Peak switch current limit | TPSM82913 | 3.7 | 4.3 | 5.1 | A |
ISWvalley | Valley switch current limit | TPSM82912(1) | 3.4 | A | ||
ISWvalley | Valley switch current limit | TPSM82913 | 4.2 | A | ||
Inegvalley | Negative valley current limit | -1.39 | -0.96 | A | ||
RDS(ON) | High-side FET on-resistance | VIN ≥ 5 V | 57 | 95 | mΩ | |
Low-side FET on-resistance | VIN ≥ 5 V | 20 | 39 | mΩ |