SBOSAA3A July   2024  – November 2024 TRF1108

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 AC-Coupled Configuration
      2. 6.3.2 DC-Coupled Configuration
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power-Down Mode
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Thermal Considerations
    2. 7.2 Typical Application
      1. 7.2.1 RF DAC Buffer Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Single-Supply Operation
      2. 7.3.2 Dual-Supply Operation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • RPV|12
サーマルパッド・メカニカル・データ
発注情報

Thermal Considerations

The TRF1108 is packaged in a 2mm × 2mm WQFN-FCRLF package that has excellent thermal properties. Connect the thermal pad under the chip to a wide VSS plane. Short the VSS plane to the other VSS pins of the chip at four corners, if possible, to allow heat propagation to the top layer of PCB. Use a thermal via to connect the thermal pad plane on the top layer of PCB to inner layer VSS planes to allow heat dissipation to the inner layers. See also Section 7.4.