4 Revision History
Changes from B Revision (October 2015) to C Revision
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Changed I/O for V+ from I to —Go
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Added VNC to Analog voltage, Analog port diode current, and ON−state switch currentGo
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Added Junction temperature, TJ to Absolute Maximum RatingsGo
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Changed MIN value for V+ from 1.8 to 1.65 and MAX value from 5 to 5.5Go
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Changed MAX value for IN from 5 to 5.5Go
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Changed MAX value for NO, NC, COM from 5 to V+Go
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Added VIL MAX value 0.6 and deleted TYP value 0.6Go
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Added Receiving Notification of Documentation Updates section Go
Changes from A Revision (December 2012) to B Revision
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Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
Changes from * Revision (November, 2012) to A Revision
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Device going from Preview to ProductionGo
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Changed ron max values from 1.1 to 1.3Go
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Changed INC(OFF), INO(OFF) min and max values for 25°C from –2 and 2 to –6 and 6, respectively. Changed min and max values for Full from –20 and 20 to –150 and 150, respectively.Go
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Changed INC(ON), INO(ON) min and max values for 25°C from –4 and 4 to –6 and 6, respectively. Changed min and max values for Full from –40 and 40 to –150 and 150, respectively.Go
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Changed ICOM(ON) min and max values for 25°C from –4 and 4 to –8 and 8, respectively. Changed min and max values for Full from –40 and 40 to –150 and 150, respectively. Go
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Inserted 25°C above Full in TA column and inserted 0.5 µA max value for I+Go
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Changed max values for rpeak from 2.1 to 2.2.Go
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Changed max values for ron from 1.5 to 1.8.Go
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Added 25°C to TA column and added 0.5 max value to I+Go
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Changed rpeak max values from 2.7 to 2.9.Go
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Changed ron max values from 2 to 2.3.Go
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Added 25°C to TA column and added 0.5 max value to I+.Go
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Changed rpeak max values from 4.9 to 5.2.Go
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Changed ron max values from 3.2 to 3.5.Go
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Added 25°C to TA column and added 0.5 max value to I+.Go
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Changed ON-state resistance from 1.1 to 1.3 Ω.Go
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Changd leakage current from ±20 nA to ±6 nA.Go