JAJSQH1B June   2023  – July 2024 TSD05C , TSD36C

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics - TSD05C
    7. 5.7 Electrical Characteristics - TSD36C
    8. 5.8 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 ドキュメントの更新通知を受け取る方法
    3. 7.3 サポート・リソース
    4. 7.4 Trademarks
    5. 7.5 静電気放電に関する注意事項
    6. 7.6 用語集
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.6 Electrical Characteristics - TSD05C

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <50nA, across operating temperature range -5.5 5.5 V
VBR Break-down voltage IIO = 1mA, IO to GND and GND to IO 7 8 9 V
ILEAK Reverse leakage current VIO = 5.5V, IO to GND or GND to IO 5 10 nA
VCLAMP Surge clamping voltage, tp = 8/20µs (2) IPP = 24A, IO to GND or GND to IO 10.7 13.8 V
IPP = 30 A, IO to GND or GND to IO 11.5 15 V
TLP clamping voltage, tp = 100ns IPP = 16 A, IO to GND or GND to IO 9.3 V
RDYN Dynamic resistance (3) IO to GND 0.15 Ω
GND to IO
CL Line capacitance VIO = 0V;  ƒ = 1 MHz, IO to GND 4 7 pF
(1) Typical parameters are measured at 25℃
(2) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5
(3) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A