JAJSVJ1 データシート

PRODUCTION DATA

5.10 Electrical Characteristics - TSD24C-Q1

At TA=25℃ (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITION	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO<10 nA, across operating temperature range			24	V
V_BR	Breakdown voltage	I_IO = 10 mA, IO to GND and GND to IO	25.5	30.5	35.5	V
I_LEAK	Reverse leakage current	V_IO= 24 V, IO to GND or GND to IO		5	10	nA
V_CLAMP	Surge clamping voltage, t_p= 8/20 µs ⁽²⁾	I_PP= 1 A, IO to GND or GND to IO			34	V
		I_PP= 5 A, IO to GND or GND to IO			43	V
		I_PP= 9 A, IO to GND or GND to IO			50	V
	TLP clamping voltage, t_p= 100 ns	I_PP = 16 A, IO to GND or GND to IO		36		V
R_DYN	Dynamic resistance⁽³⁾	IO to GND		0.35		Ω
R_DYN	Dynamic resistance⁽³⁾	GND to IO		0.35		Ω
C_L	Line capacitance	V_IO= 0 V; ƒ = 1 MHz, IO to GND		4.3	6	pF

(1) Typical parameters are measured at 25℃

(2) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

(3) Extraction of R_DYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A