JAJSVJ1 データシート

PRODUCTION DATA

5.7 Electrical Characteristics - TSD12C-Q1

At TA=25℃ (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITION	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO<10 nA, across operating temperature range			12	V
V_BRR	Breakdown voltage	I_IO = 10 mA, IO to GND and GND to IO	13.2	15.6	19	V
I_LEAK	Reverse leakage current	V_IO= 12 V, IO to GND or GND to IO		5	10	nA
V_CLAMP	Surge clamping voltage, t_p= 8/20 µs ⁽²⁾	I_PP= 1 A, IO to GND or GND to IO			18.5	V
		I_PP= 5 A, IO to GND or GND to IO			21	V
		I_PP= 15 A, IO to GND or GND to IO			26	V
	TLP clamping voltage, t_p= 100 ns	I_PP = 16 A, IO to GND or GND to IO		19.4		V
R_DYN	Dynamic resistance⁽³⁾	IO to GND		0.15		Ω
R_DYN	Dynamic resistance⁽³⁾	GND to IO		0.15		Ω
C_L	Line capacitance	V_IO= 0 V; ƒ = 1 MHz, IO to GND		6.5	8	pF

(1) Typical parameters are measured at 25℃

(2) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5

(3) Extraction of R_DYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A