JAJSEX4A December   2017  – March 2018 TVS1400

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      占有面積の比較
      2.      8/20rep%#181;sのサージ・イベントに対する電圧クランプの応答
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings - JEDEC
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Reliability Testing
    5. 8.5 Device Functional Modes
      1. 8.5.1 Protection Specifications
      2. 8.5.2 Minimal Derating
      3. 8.5.3 Transient Performance
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
      4. 9.2.4 Configuration Options
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントの更新通知を受け取る方法
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse Stand-off Voltage -0.5 14 V
ILEAK Leakage Current Measured at VIN = VRWM, TA  = 27°C 2.2 16 nA
Measured at VIN = VRWM, TA  = 85°C 16 300 nA
Measured at VIN = VRWM, TA  = 105°C 60 1000 nA
VF Forward Voltage IIN  = 1 mA from GND to IO 0.25 0.5 0.65 V
VBR Break-down Voltage IIN  = 1 mA from IO to GND 16.2 16.9 17.8 V
VFCLAMP Forward Clamp Voltage 43 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C 2 5 V
VCLAMP Clamp Voltage 24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 17.9 18.5 V
43 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C 18.4 18.8 V
35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = Vrwm before surge, TA = 125°C 18.5 19.3 V
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C 30 mΩ
CIN Input pin capacitance VIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND 120 pF
SR Maximum Slew Rate 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 27°C 2.5 V/µs
0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 105°C 0.7 V/µs