JAJSMI4A February   2022  – May 2024 TXU0101

PRODMIX  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions—TXU0101
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics, VCCA = 1.2 ± 0.1V
    7. 5.7  Switching Characteristics, VCCA = 1.5 ± 0.1V
    8. 5.8  Switching Characteristics, VCCA = 1.8 ± 0.15V
    9. 5.9  Switching Characteristics, VCCA = 2.5 ± 0.2V
    10. 5.10 Switching Characteristics, VCCA = 3.3 ± 0.3V
    11. 5.11 Switching Characteristics, VCCA = 5.0 ± 0.5V
    12. 5.12 Operating Characteristics
    13. 5.13 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Load Circuit and Voltage Waveforms
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 CMOS Schmitt-Trigger Inputs with Integrated Pulldowns
        1. 7.3.1.1 Inputs with Integrated Static Pull-Down Resistors
      2. 7.3.2 Control Logic (OE) with VCC(MIN) Circuitry
      3. 7.3.3 Balanced High-Drive CMOS Push-Pull Outputs
      4. 7.3.4 VCC Isolation and VCC Disconnect
      5. 7.3.5 Over-Voltage Tolerant Inputs
      6. 7.3.6 Glitch-Free Power Supply Sequencing
      7. 7.3.7 Negative Clamping Diodes
      8. 7.3.8 Fully Configurable Dual-Rail Design
      9. 7.3.9 Supports High-Speed Translation
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Regulatory Requirements
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 ドキュメントの更新通知を受け取る方法
    4. 9.4 サポート・リソース
    5. 9.5 Trademarks
    6. 9.6 静電気放電に関する注意事項
    7. 9.7 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DBV|6
  • DTQ|6
  • DCK|6
  • DRY|6
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)(1) (2)
PARAMETER TEST CONDITIONS VCCA VCCB Operating free-air temperature (TA) UNIT
25°C –40°C to 85°C –40°C to 125°C
MIN TYP MAX MIN TYP MAX MIN TYP MAX
VT+ Positive-going input-threshold voltage Data Inputs
(Ax, Bx)
(Referenced to VCCI)
1.1V 1.1V 0.44 0.88 0.44 0.88 V
1.4V 1.4V 0.60 0.98 0.60 0.98
1.65V 1.65V 0.76 1.13 0.76 1.13
2.3V 2.3V 1.08 1.56 1.08 1.56
3V 3V 1.48 1.92 1.48 1.92
4.5V 4.5V 2.19 2.74 2.19 2.74
5.5V 5.5V 2.65 3.33 2.65 3.33
OE
(Referenced to VCCA or VCCB)
1.1V 1.1V 0.44 0.88 0.44 0.88 V
1.4V 1.4V 0.60 0.98 0.60 0.98
1.65V 1.65V 0.76 1.13 0.76 1.13
2.3V 2.3V 1.08 1.56 1.08 1.56
3V 3V 1.48 1.92 1.48 1.92
4.5V 4.5V 2.19 2.74 2.19 2.74
5.5V 5.5V 2.65 3.33 2.65 3.33
VT- Negative-going input-threshold voltage Data Inputs
(Ax, Bx)
(Referenced to VCCI)
1.1V 1.1V 0.17 0.48 0.17 0.48 V
1.4V 1.4V 0.28 0.59 0.28 0.59
1.65V 1.65V 0.35 0.69 0.35 0.69
2.3V 2.3V 0.56 0.97 0.56 0.97
3V 3V 0.89 1.5 0.89 1.5
4.5V 4.5V 1.51 1.97 1.51 1.97
5.5V 5.5V 1.88 2.4 1.88 2.4
OE
(Referenced to VCCA or VCCB)
1.1V 1.1V 0.17 0.48 0.17 0.48 V
1.4V 1.4V 0.28 0.59 0.28 0.59
1.65V 1.65V 0.35 0.69 0.35 0.69
2.3V 2.3V 0.56 0.97 0.56 0.97
3V 3V 0.89 1.5 0.89 1.5
4.5V 4.5V 1.51 1.97 1.51 1.97
5.5V 5.5V 1.88 2.46 1.88 2.46
ΔVT Input-threshold hysteresis
(VT+ – VT-)
Data Inputs
(Ax, Bx)
(Referenced to VCCI)
1.1V 1.1V 0.2 0.4 0.2 0.4 V
1.4V 1.4V 0.25 0.5 0.25 0.5
1.65V 1.65V 0.3 0.55 0.3 0.55
2.3V 2.3V 0.38 0.65 0.38 0.65
3V 3V 0.46 0.72 0.46 0.72
4.5V 4.5V 0.58 0.93 0.58 0.93
5.5V 5.5V 0.69 1.06 0.69 1.06
OE
(Referenced to VCCA or VCCB)
1.1V 1.1V 0.15 0.41 0.15 0.41 V
1.4V 1.4V 0.2 0.5 0.2 0.5
1.65V 1.65V 0.23 0.55 0.23 0.55
2.3V 2.3V 0.32 0.65 0.32 0.65
3V 3V 0.39 0.72 0.39 0.72
4.5V 4.5V 0.57 0.97 0.57 0.97
5.5V 5.5V 0.69 1.18 0.69 1.18
VOH High-level output voltage (3) IOH = –0.1mA 1.1V – 5.5V 1.1V – 5.5V VCCO – 0.1 VCCO – 0.1 V
IOH = –0.5mA 1.1V 1.1V 0.82 0.82
IOH = –3mA 1.4V 1.4V 1 1
IOH = –4.5mA 1.65V 1.65V 1.2 1.2
IOH = –8mA 2.3V 2.3V 1.7 1.7
IOH = –10mA 3V 3V 2.2 2.2
IOH = –12mA 4.5V 4.5V 3.7 3.7
VOL Low-level output voltage (4) IOL = 0.1mA 1.1V – 5.5V 1.1V – 5.5V 0.1 0.1 V
IOL = 0.5mA 1.1V 1.1V 0.27 0.27
IOL = 3mA 1.4V 1.4V 0.35 0.35
IOL = 4.5mA 1.65V 1.65V 0.45 0.45
IOL = 8mA 2.3V 2.3V 0.7 0.7
IOL = 10mA 3V 3V 0.8 0.8
IOL = 8mA 4.5V 4.5V 0.55 0.55
IOL = 12mA 4.5V 4.5V 0.8 0.8
II Input leakage current OE
VI = VCC or GND
1.1V – 5.5V 1.1V – 5.5V –0.1 1.5 –0.1 1.5 –0.1 2 µA
Data Inputs
(Ax, Bx)
VI = VCCI or GND
1.1V – 5.5V 1.1V – 5.5V –0.1 1.5 –0.1 1.5 –2 2 µA
Ioff Partial power down current A Port or B Port
VI or VO = 0V – 5.5V
0V 1.1V – 5.5V –1.5 1.5 –2 2 –2.5 2.5 µA
1.1V – 5.5V 0V –1.5 1.5 –2 2 –2.5 2.5
Ioff-float Floating supply Partial power down current A Port or B Port
VI or VO = GND
Floating(5) 1.1V – 5.5V –1.5 1.5 –2 2 –2.5 2.5 µA
0V – 5.5V Floating(5) –1.5 1.5 –2 2 –2.5 2.5
IOZ Tri-state output current A or B Port:
VI = VCCI or GND
VO = VCCO or GND
OE = GND
1.1V – 5.5V 1.1V – 5.5V –0.3 0.3 –1 1 –2 2 µA
ICCA VCCA supply current VI = VCCI or GND
IO = 0
1.1V – 5.5V 1.1V – 5.5V 1.5 2.5 6 µA
0V 5.5V –0.3 –1 –1
5.5V 0V 1 1.5 3
VI = GND
IO = 0
5.5V Floating(5) 1.5 7 15
ICCB VCCB supply current VI = VCCI or GND
IO = 0
1.1V – 5.5V 1.1V – 5.5V 1.5 2.5 6 µA
0V 5.5V 1 1.5 3
5.5V 0V –0.3 –1 –1
VI = GND
IO = 0
Floating(5) 5.5V 1.5 7 15
ICCA + ICCB Combined supply current VI = VCCI or GND
IO = 0
1.1V – 5.5V 1.1V – 5.5V 2.5 3 6 µA
Ci Control Input Capacitance VI = 3.3V or GND 3.3V 3.3V 2.75 3 3.5 pF
Cio Data I/O Capacitance OE = GND, VO = 1.65V DC +1MHz −16 dBm sine wave 3.3V 3.3V 3 4 4 pF
VCCI is the VCC associated with the input port.
VCCO is the VCC associated with the output port.
Tested at VI = VT+(MAX).
Tested at VI = VT-(MIN).
Floating is defined as a node that is both not actively driven by an external device and has leakage not exceeding 10 nA.