JAJSKL3B august   2020  – may 2023 UCC21710

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay
      1. 7.1.1 Non-Inverting and Inverting Propagation Delay
    2. 7.2 Input Deglitch Filter
    3. 7.3 Active Miller Clamp
      1. 7.3.1 Internal Active Miller Clamp
    4. 7.4 Under Voltage Lockout (UVLO)
      1. 7.4.1 VCC UVLO
      2. 7.4.2 VDD UVLO
    5. 7.5 OC (Over Current) Protection
      1. 7.5.1 OC Protection with Soft Turn-OFF
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Power Supply
      2. 8.3.2  Driver Stage
      3. 8.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 8.3.4  Active Pulldown
      5. 8.3.5  Short Circuit Clamping
      6. 8.3.6  Internal Active Miller Clamp
      7. 8.3.7  Overcurrent and Short Circuit Protection
      8. 8.3.8  Soft Turn-off
      9. 8.3.9  Fault ( FLT, Reset and Enable ( RST/EN)
      10. 8.3.10 Isolated Analog to PWM Signal Function
    4. 8.4 Device Functional Modes
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input filters for IN+, IN- and RST/EN
        2. 9.2.2.2 PWM Interlock of IN+ and IN-
        3. 9.2.2.3 FLT, RDY and RST/EN Pin Circuitry
        4. 9.2.2.4 RST/EN Pin Control
        5. 9.2.2.5 Turn on and turn off gate resistors
        6. 9.2.2.6 Overcurrent and Short Circuit Protection
          1. 9.2.2.6.1 Protection Based on Power Modules with Integrated SenseFET
          2. 9.2.2.6.2 Protection Based on Desaturation Circuit
          3. 9.2.2.6.3 Protection Based on Shunt Resistor in Power Loop
        7. 9.2.2.7 Isolated Analog Signal Sensing
          1. 9.2.2.7.1 Isolated Temperature Sensing
          2. 9.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 9.2.2.8 Higher Output Current Using an External Current Buffer
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 用語集
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.7 Overcurrent and Short Circuit Protection

The UCC21710 implements a fast overcurrent and short circuit protection feature to protect the SiC MOSFET or IGBT from catastrophic breakdown during fault. The OC pin of the device has a typical 0.7V threshold with respect to COM, source or emitter of the power semiconductor. When the input is in floating condition, or the output is held in low state, the OC pin is pulled down by an internal MOSFET and held in LOW state, which prevents the overcurrent and short circuit fault from false triggering. The OC pin is in high-impedance state when the output is in high state, which means the overcurrent and short circuit protection feature only works when the power semiconductor is in on state. The internal pulldown MOSFET helps to discharge the voltage of OC pin when the power semiconductor is turned off.

The overcurrent and short circuit protection feature can be used to SiC MOSFET module or IGBT module with SenseFET, traditional desaturation circuit and shunt resistor in series with the power loop for lower power applications. For SiC MOSFET module or IGBT module with SenseFET, the SenseFET integrated in the module can scale down the drain current or collector current. With an external high precision sense resistor, the drain current or collector current can be accurately measured. If the voltage of the sensed resistor higher than the overcurrent threshold VOCTH is detected, the soft turn-off is initiated. A fault will be reported to the input side FLT pin to DSP/MCU. The output is held to LOW after the fault is detected, and can only be reset by the RST/EN pin. The state-of-art overcurrent and short circuit detection time helps to ensure a short shutdown time for SiC MOSFET and IGBT.

The overcurrent and short circuit protection feature can also be paired with desaturation circuit and shunt resistors. The DESAT threshold can be programmable in this case, which increases the versatility of the device. Detailed application diagrams of desaturation circuit and shunt resistor will be given in Section 9.2.2.6.

  • High current and high dI/dt during the overcurrent and short circuit fault can cause a voltage bounce on shunt resistor’s parasitic inductance and board layout parasitic, which results in false trigger of OC pin. High precision, low ESL and small value resistor must be used in this approach.
  • Shunt resistor approach is not recommended for high power applications and short circuit protection of the low power applications.

The detailed applications of the overcurrent and short circuit feature will be discussed in the Application and Implementation section.

GUID-60ED0E71-62E5-4CA3-AB4F-EE5E88F6B641-low.svgFigure 8-5 Overcurrent and Short Circuit Protection